An inter-subband device with terahertz applications

Philip D. Buckle*, Philip Dawson, Mark A. Lynch, Chun Yi Kuo, Mohammed Missous, William S. Truscott

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A theoretical analysis of a modulator based on two coupled resonators is presented in this paper. This modulator exhibits a resonant enhancement in its response. It is used as a component of tunneling structures designed for operation at terahertz frequencies; unlike conventional resonant tunneling structures, these use triple barriers. Data from optical and electrical measurements on a series of devices based on one design of a triple-barrier tunneling structure have been analyzed to estimate their behavior at frequencies over 1 THz. The analysis gives values for the resonantly enhanced admittance, its bandwidth, the bias-frequency relationship, and the requirements for a matching circuit to a 50-fi environment. The results show that one existing structure might be used in oscillators working at 1 THz.

Original languageEnglish
Pages (from-to)632-638
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 1 Dec 2000

Keywords

  • Inter-subband devices
  • Microwave filters
  • Modulators
  • Resonant tunneling
  • Terahertz oscillators
  • Triple-barrier devices

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