An inter-subband device with THz applications

P. D. Buckle, P. Dawson, M. A. Lynch, Chun Yi Kuo, M. Missous, W. S. Truscott

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

Abstract

Data from optical and electrical measurements on a series of devices based on one design of triple barrier tunnelling structure have been analysed to estimate their behaviour at frequencies over 1 THz. The analysis gives values for the resonantly enhanced admittance, its bandwidth, the bias-frequency relationship and the requirements for a matching circuit to a 50 Ohm environment. The results show that one existing structure could be used in oscillators working at 1 THz.

Original languageEnglish
Title of host publication1998 IEEE 6th International Conference on Terahertz Electronics, THz 1998 - Proceedings
EditorsP. Harrison
PublisherIEEE
Pages82-85
Number of pages4
ISBN (Electronic)0780349032, 9780780349032
DOIs
Publication statusPublished - 1 Jan 1998
Event1998 IEEE 6th International Conference on Terahertz Electronics, THz 1998 - Leeds, United States
Duration: 3 Sept 19984 Sept 1998

Publication series

Name1998 IEEE 6th International Conference on Terahertz Electronics, THz 1998 - Proceedings
Volume1998-September

Conference

Conference1998 IEEE 6th International Conference on Terahertz Electronics, THz 1998
Country/TerritoryUnited States
CityLeeds
Period3/09/984/09/98

Keywords

  • inter-subband devices
  • resonant tunnelling
  • terahertz oscillators
  • triple-barrier devices

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