An investigation of deep levels in GaAs FETs by selective de-excitation of the deep donor level EL2

J. Madden, M. R. Brozel, A. R. Peaker, G. Ashcroft

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A modified photo-FET technique is presented where the Idss photoresponse before and after EL2 quenching is measured. The technique has been applied both to ion-implanted FETs and to VTPE grown devices with buffer thicknesses ranging from 0.7 ¿m to 3 pm grown on chroinum-doped substrates. The removal of the EL2 contribution to the photoresponse leads to a modification of the charge states of the remaining deep levels whose presence can be detected by examining the difference between the quenched and unquenched Idss spectra. In the case of VPE FETs, a minimum buffer thickness to avoid chromium diffusion problems can be established.

Original languageEnglish
Title of host publicationESSDERC 1987 - 17th European Solid State Device Research Conference
PublisherIEEE Computer Society
Pages855-858
Number of pages4
ISBN (Electronic)0444704779
ISBN (Print)9780444704771
Publication statusPublished - 1987
Event17th European Solid State Device Research Conference, ESSDERC 1987 - Bologna, Italy
Duration: 14 Sept 198717 Sept 1987

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference17th European Solid State Device Research Conference, ESSDERC 1987
Country/TerritoryItaly
CityBologna
Period14/09/8717/09/87

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