An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry

M. A. Hughes; Kevin P. Homewood; R. J. Curry; Yuko Ohno; T. Mizutani

doi:10.1063/1.4823602

An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry

M. A. Hughes, Kevin P. Homewood, R. J. Curry, Yuko Ohno, T. Mizutani

Research output: Contribution to journal › Article › peer-review

Abstract

A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I₀) of 6 × 10^-16 A, and an ideality factor (η) of 1.38. When the gate above the Ti contact is biased negatively the diode inverts. When positive bias is then applied to the gate above the Pd contact minority carrier injection is suppressed. Configured such I₀ and η were 2 × 10^-14 A and 2.01, respectively. Electrical characterization indicates that the Schottky barrier height for electrons is lower for the Pd contact than the Ti contact.

Original language	English
Article number	133508
Number of pages	4
Journal	Applied Physics Letters
Volume	103
Issue number	13
DOIs	https://doi.org/10.1063/1.4823602
Publication status	Published - 23 Sept 2013

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abstract = "A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I0) of 6 × 10-16 A, and an ideality factor (η) of 1.38. When the gate above the Ti contact is biased negatively the diode inverts. When positive bias is then applied to the gate above the Pd contact minority carrier injection is suppressed. Configured such I0 and η were 2 × 10-14 A and 2.01, respectively. Electrical characterization indicates that the Schottky barrier height for electrons is lower for the Pd contact than the Ti contact.",

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AU - Hughes, M. A.

AU - Homewood, Kevin P.

AU - Curry, R. J.

AU - Ohno, Yuko

AU - Mizutani, T.

PY - 2013/9/23

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N2 - A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I0) of 6 × 10-16 A, and an ideality factor (η) of 1.38. When the gate above the Ti contact is biased negatively the diode inverts. When positive bias is then applied to the gate above the Pd contact minority carrier injection is suppressed. Configured such I0 and η were 2 × 10-14 A and 2.01, respectively. Electrical characterization indicates that the Schottky barrier height for electrons is lower for the Pd contact than the Ti contact.

AB - A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I0) of 6 × 10-16 A, and an ideality factor (η) of 1.38. When the gate above the Ti contact is biased negatively the diode inverts. When positive bias is then applied to the gate above the Pd contact minority carrier injection is suppressed. Configured such I0 and η were 2 × 10-14 A and 2.01, respectively. Electrical characterization indicates that the Schottky barrier height for electrons is lower for the Pd contact than the Ti contact.

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JO - Applied Physics Letters

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An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry

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