TY - GEN
T1 - An Ultrafast Semiconducting Nanowire THz Polarization Modulator
AU - Damry, D.A.
AU - Boland, J.L.
AU - Baig, S.A.
AU - Joyce, Hannah J
AU - Johnston, M.B.
PY - 2019/9/1
Y1 - 2019/9/1
N2 - In this work, we will demonstrate a novel ultrafast THz modulator based on GaAs semiconductor nanowires at very high THz bandwidth. The modulator devices were fabricated using a highly flexible and cheap substrate - parylene-c. Through the use of multiple layers of this substrate, we show that for higher layers, a higher modulation depth is achieved without affecting the bandwidth over which the devices can operate. A terahertz air-plasma setup was built which allowed us to assess the devices over a broad range bandwidth of 0.1 THz - 40 THz.
AB - In this work, we will demonstrate a novel ultrafast THz modulator based on GaAs semiconductor nanowires at very high THz bandwidth. The modulator devices were fabricated using a highly flexible and cheap substrate - parylene-c. Through the use of multiple layers of this substrate, we show that for higher layers, a higher modulation depth is achieved without affecting the bandwidth over which the devices can operate. A terahertz air-plasma setup was built which allowed us to assess the devices over a broad range bandwidth of 0.1 THz - 40 THz.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-85074710499&partnerID=MN8TOARS
U2 - 10.1109/IRMMW-THz.2019.8873964
DO - 10.1109/IRMMW-THz.2019.8873964
M3 - Conference contribution
BT - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ER -