Analysis of Carrier Transport and Band Tail States in p-type Tin Monoxide Thin-film Transistors by Temperature Dependent Characteristics

Jiawei Zhang; Xi Kong; Jia Yang; Yunpeng Li; Joshua Wilson; Jie Liu; Qian Xin; Qingpu Wang; Aimin Song

doi:10.1063/1.4955124

Analysis of Carrier Transport and Band Tail States in p-type Tin Monoxide Thin-film Transistors by Temperature Dependent Characteristics

Jiawei Zhang, Xi Kong, Jia Yang, Yunpeng Li, Joshua Wilson, Jie Liu, Qian Xin, Qingpu Wang, Aimin Song

Research output: Contribution to journal › Article › peer-review

405 Downloads (Pure)

Abstract

Tin monoxide (SnO) has drawn much attention in recent years due to its high hole mobility, transparency and potential for mass production. However, due to its metastable nature, the deposited film often contains multi-phases such as metallic tin and tin dioxide, which may degrade its electrical properties. Here we presented the temperature dependent characteristics of p-type SnO thin film transistors. The hole transport mechanism is dominated by band conduction at high temperatures and variable range hopping at low temperatures. The maximum activation energy was found to be 308 meV, which denotes a bandgap of around 0.6 eV. The density of states was found to be 1.12×1021 cm-3 eV-1 at VG= -80 V, and 6.75×1020 cm-3 eV-1 at VG= 0 V, respectively.

Original language	English
Article number	263503
Journal	Applied Physics Letters
Volume	108
DOIs	https://doi.org/10.1063/1.4955124
Publication status	Published - 30 Jun 2016

Access to Document

10.1063/1.4955124

06-10 Analysis of Carrier Transport and Band Tail StatesAccepted author manuscript, 2.48 MB

Cite this

@article{014f6ff4875942cba9cf1dd5d63bf3c3,

title = "Analysis of Carrier Transport and Band Tail States in p-type Tin Monoxide Thin-film Transistors by Temperature Dependent Characteristics",

abstract = "Tin monoxide (SnO) has drawn much attention in recent years due to its high hole mobility, transparency and potential for mass production. However, due to its metastable nature, the deposited film often contains multi-phases such as metallic tin and tin dioxide, which may degrade its electrical properties. Here we presented the temperature dependent characteristics of p-type SnO thin film transistors. The hole transport mechanism is dominated by band conduction at high temperatures and variable range hopping at low temperatures. The maximum activation energy was found to be 308 meV, which denotes a bandgap of around 0.6 eV. The density of states was found to be 1.12×1021 cm-3 eV-1 at VG= -80 V, and 6.75×1020 cm-3 eV-1 at VG= 0 V, respectively.",

author = "Jiawei Zhang and {Xi Kong} and {Jia Yang} and {Yunpeng Li} and Joshua Wilson and {Jie Liu} and {Qian Xin} and {Qingpu Wang} and Aimin Song",

year = "2016",

month = jun,

day = "30",

doi = "10.1063/1.4955124",

language = "English",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Analysis of Carrier Transport and Band Tail States in p-type Tin Monoxide Thin-film Transistors by Temperature Dependent Characteristics

AU - Zhang, Jiawei

AU - Xi Kong,

AU - Jia Yang,

AU - Yunpeng Li,

AU - Wilson, Joshua

AU - Jie Liu,

AU - Qian Xin,

AU - Qingpu Wang,

AU - Song, Aimin

PY - 2016/6/30

Y1 - 2016/6/30

N2 - Tin monoxide (SnO) has drawn much attention in recent years due to its high hole mobility, transparency and potential for mass production. However, due to its metastable nature, the deposited film often contains multi-phases such as metallic tin and tin dioxide, which may degrade its electrical properties. Here we presented the temperature dependent characteristics of p-type SnO thin film transistors. The hole transport mechanism is dominated by band conduction at high temperatures and variable range hopping at low temperatures. The maximum activation energy was found to be 308 meV, which denotes a bandgap of around 0.6 eV. The density of states was found to be 1.12×1021 cm-3 eV-1 at VG= -80 V, and 6.75×1020 cm-3 eV-1 at VG= 0 V, respectively.

AB - Tin monoxide (SnO) has drawn much attention in recent years due to its high hole mobility, transparency and potential for mass production. However, due to its metastable nature, the deposited film often contains multi-phases such as metallic tin and tin dioxide, which may degrade its electrical properties. Here we presented the temperature dependent characteristics of p-type SnO thin film transistors. The hole transport mechanism is dominated by band conduction at high temperatures and variable range hopping at low temperatures. The maximum activation energy was found to be 308 meV, which denotes a bandgap of around 0.6 eV. The density of states was found to be 1.12×1021 cm-3 eV-1 at VG= -80 V, and 6.75×1020 cm-3 eV-1 at VG= 0 V, respectively.

U2 - 10.1063/1.4955124

DO - 10.1063/1.4955124

M3 - Article

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 263503

ER -

Analysis of Carrier Transport and Band Tail States in p-type Tin Monoxide Thin-film Transistors by Temperature Dependent Characteristics

Abstract

Access to Document

Fingerprint

Cite this