Analysis of defects at the interface between high-k thin films and (1 0 0) silicon

B J Jones, R C Barklie

    Research output: Contribution to journalArticlepeer-review


    Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, Pb0 and Pb1 defects, previously observed in Si/SiO2 structures. We show that the Si-db defect is located in the substrate only. We quantify the unpassivated P b-type defect density and show that this can be reduced by a pre-deposition nitridation step. However, forming gas annealing at temperatures up to 550 ??C causes no further reduction in defect density; this may be related to the low deposition temperature, which causes a spread in passivation activation energies. ?? 2005 Elsevier B.V. All rights reserved.
    Original languageEnglish
    Pages (from-to)74-77
    Number of pages4
    Journal14th Biennial Conference on Insulating Films on Semiconductors
    Issue number{SUPPL}.
    Publication statusPublished - 2005


    • Activation energy
    • Aluminium oxide
    • Aluminum compounds
    • Annealing
    • Atomic layer deposition
    • Defect density
    • Defects
    • Deposition
    • Electron spin resonance spectroscopy
    • EPR
    • Forming gas annealing (FGA)
    • High-k
    • Interfaces
    • Oxidation
    • Paramagnetism
    • Passivation
    • Permittivity
    • Post deposition annealing (PDA)
    • Thin films


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