Analysis of hopping conduction in semiconducting and metallic carbon nanotube devices

Engineering

• Localisation 100%
• Barrier Height 66%
• Defects 33%
• Field-Effect Transistor 33%
• Gate Voltage 33%
• Temperature Range 33%
• Single-Walled Carbon Nanotube 33%
• Density of State 33%
• Beam Lithography 33%
• Saturates 33%
• Length Ratio 33%
• Constant Density 33%
• Fermi Level 33%

Physics

• Position (Location) 100%
• Electrons 100%
• Value 33%
• Defects 33%
• Increasing 33%
• Field Effect Transistor 33%
• Carbon Nanotube 33%
• Region 33%
• Differences 33%
• Adjusting 33%
• Majority Carrier 33%