Analysis of Impurity-Related Radiative Transitions in Silicon Materials Using Temperature-Dependent Photoluminescence

Tarek O. Abdul Fattah, Janet Jacobs, Vladimir P. Markevich, Nikolay V. Abrosimov, Matthew P. Halsall, Iain F. Crowe, Anthony R. Peaker

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

Abstract

The contradictory reports in the literature about the stability of Ga-doped silicon (Si) material for photovoltaic applications, in comparison to those doped with B, necessitate a more detailed understanding of the characteristics of this material before solid conclusions about degradation mechanisms can be made. In this work, high-resolution low-temperature photoluminescence (PL) has been used to investigate and analyze the luminescence from Ga-doped and P+Ga co-doped Czochralski-grown silicon (Cz-Si) materials. Comparison of thermally induced changes in luminescence features for these materials are compared to those occurring in B-doped and P+B co-doped Si materials. It has been found that the Ga bound exciton (BE) exhibits a triplet luminescence structure which is preserved in the co-doped material, explained by the splitting of the exciton ground state. A similar effect does not occur for the BE-related PL signal in B-doped silicon material. A low temperature (10-20 K) range was then used to investigate the temperature-induced changes in impurity related photon emission lines in the PL spectra of the studied materials. The effect of thermal energy on the PL intensity of different radiative recombination channels is elucidated. It has been argued that the presence of compensating impurities causes enhanced radiative recombination of some excitonic emissions while others behave in a similar way as in a single-doped material. The possible relationship of the observed effects on electron-hole recombination at room temperature is discussed.

Original languageEnglish
Title of host publication2023 IEEE 50th Photovoltaic Specialists Conference, PVSC 2023
PublisherIEEE
ISBN (Electronic)9781665460590
DOIs
Publication statusPublished - 2023
Event50th IEEE Photovoltaic Specialists Conference, PVSC 2023 - San Juan, United States
Duration: 11 Jun 202316 Jun 2023

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference50th IEEE Photovoltaic Specialists Conference, PVSC 2023
Country/TerritoryUnited States
CitySan Juan
Period11/06/2316/06/23

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