Analysis of quantum coherence in bismuth-doped silicon: A system of strongly coupled spin qubits

M. H. Mohammady, G. W. Morley, A. Nazir, T. S. Monteiro

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    There is a growing interest in bismuth-doped silicon (Si:Bi) as an alternative to the well-studied proposals for silicon-based quantum information processing (QIP) using phosphorus-doped silicon (Si:P). We focus here on the implications of its anomalously strong hyperfine coupling. In particular, we analyze in detail the regime where recent pulsed magnetic resonance experiments have demonstrated the potential for orders of magnitude speedup in quantum gates by exploiting transitions that are electron paramagnetic resonance (EPR) forbidden at high fields. We also present calculations using a phenomenological Markovian master equation, which models the decoherence of the electron spin due to Gaussian temporal magnetic field perturbations. The model quantifies the advantages of certain "optimal working points" identified as the df/dB=0 regions, where f is the transition frequency, which come in the form of frequency minima and maxima. We show that at such regions, dephasing due to the interaction of the electron spin with a fluctuating magnetic field in the z direction (usually adiabatic) is completely removed. © 2012 American Physical Society.
    Original languageEnglish
    Article number094404
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Issue number9
    Publication statusPublished - 5 Mar 2012

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