Annealing experiments on InP/InGaAs single and double HBTs grown by molecular beam epitaxy

J. Sexton; M. Missous

doi:10.1109/EDMO.2002.1174975

Annealing experiments on InP/InGaAs single and double HBTs grown by molecular beam epitaxy

J. Sexton, M. Missous

EEE - Academic & Research

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

InP/InGaAs SHBTs (sample#1444) and DHBTs (sample#1450) have been successfully grown by solid source molecular beam epitaxy using a GaP decomposition source developed at UMIST. Thermal stability studies were performed on the heavily beryllium doped (1.5×10¹⁹ cm^-3) HBTs using post-growth annealing in an N₂ ambient. The devices were annealed between a temperature range of 350-550°C for 15 minutes prior to fabrication and their I-V characteristics compared. Excellent thermal stability was found with the major transistor parameters hardly affected up to annealing temperatures of 500°C.

Original language	English
Title of host publication	10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002
Publisher	IEEE
Pages	300-305
Number of pages	6
ISBN (Electronic)	0780375300
DOIs	https://doi.org/10.1109/EDMO.2002.1174975
Publication status	Published - 1 Jan 2002
Event	10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications - Manchester, United Kingdom Duration: 18 Nov 2002 → 19 Nov 2002

Publication series

Name	IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications
Volume	2002-January

Conference

Conference	10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications
Abbreviated title	EDMO 2002
Country/Territory	United Kingdom
City	Manchester
Period	18/11/02 → 19/11/02

Keywords

Annealing
Fabrication
Heterojunction bipolar transistors
Indium gallium arsenide
Indium phosphide
Molecular beam epitaxial growth
Solids
Temperature distribution
Thermal stability
Zinc

Access to Document

10.1109/EDMO.2002.1174975

Cite this

Sexton, J., & Missous, M. (2002). Annealing experiments on InP/InGaAs single and double HBTs grown by molecular beam epitaxy. In 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002 (pp. 300-305). Article 1174975 (IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications; Vol. 2002-January). IEEE. https://doi.org/10.1109/EDMO.2002.1174975

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title = "Annealing experiments on InP/InGaAs single and double HBTs grown by molecular beam epitaxy",

abstract = "InP/InGaAs SHBTs (sample#1444) and DHBTs (sample#1450) have been successfully grown by solid source molecular beam epitaxy using a GaP decomposition source developed at UMIST. Thermal stability studies were performed on the heavily beryllium doped (1.5×1019 cm-3) HBTs using post-growth annealing in an N2 ambient. The devices were annealed between a temperature range of 350-550°C for 15 minutes prior to fabrication and their I-V characteristics compared. Excellent thermal stability was found with the major transistor parameters hardly affected up to annealing temperatures of 500°C.",

keywords = "Annealing, Fabrication, Heterojunction bipolar transistors, Indium gallium arsenide, Indium phosphide, Molecular beam epitaxial growth, Solids, Temperature distribution, Thermal stability, Zinc",

author = "J. Sexton and M. Missous",

year = "2002",

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doi = "10.1109/EDMO.2002.1174975",

language = "English",

series = "IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications",

publisher = "IEEE",

pages = "300--305",

booktitle = "10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002",

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note = "10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002 ; Conference date: 18-11-2002 Through 19-11-2002",

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Sexton, J & Missous, M 2002, Annealing experiments on InP/InGaAs single and double HBTs grown by molecular beam epitaxy. in 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002., 1174975, IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, vol. 2002-January, IEEE, pp. 300-305, 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, Manchester, United Kingdom, 18/11/02. https://doi.org/10.1109/EDMO.2002.1174975

Annealing experiments on InP/InGaAs single and double HBTs grown by molecular beam epitaxy. / Sexton, J.; Missous, M.
10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002. IEEE, 2002. p. 300-305 1174975 (IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications; Vol. 2002-January).

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

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AB - InP/InGaAs SHBTs (sample#1444) and DHBTs (sample#1450) have been successfully grown by solid source molecular beam epitaxy using a GaP decomposition source developed at UMIST. Thermal stability studies were performed on the heavily beryllium doped (1.5×1019 cm-3) HBTs using post-growth annealing in an N2 ambient. The devices were annealed between a temperature range of 350-550°C for 15 minutes prior to fabrication and their I-V characteristics compared. Excellent thermal stability was found with the major transistor parameters hardly affected up to annealing temperatures of 500°C.

KW - Annealing

KW - Fabrication

KW - Heterojunction bipolar transistors

KW - Indium gallium arsenide

KW - Indium phosphide

KW - Molecular beam epitaxial growth

KW - Solids

KW - Temperature distribution

KW - Thermal stability

KW - Zinc

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Sexton J, Missous M. Annealing experiments on InP/InGaAs single and double HBTs grown by molecular beam epitaxy. In 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002. IEEE. 2002. p. 300-305. 1174975. (IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications). doi: 10.1109/EDMO.2002.1174975

Annealing experiments on InP/InGaAs single and double HBTs grown by molecular beam epitaxy

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