Anomaly and intrinsic capacitance behaviour over temperature of AlGaN/GaN/SiC and AlGaAs/GaAs HEMTs for microwave application

Mohammad Abdul Alim, Ali Rezazadeh, Norshakila Haris, Christophe Gaquiere

    Research output: Contribution to conferencePaperpeer-review

    Abstract

    In this paper, we report anomaly and intrinsic capacitance behaviour over temperature of AlGaN/GaN/SiC and AlGaAs/GaAs high electron mobility transistors using on wafer measurement up to 50 GHz. Differences are observed; most notably that the trend of the intrinsic capacitances behaviour with temperature of the two device technologies are completely different. This anomaly continues for the other device parameter such as threshold voltage, two-dimension electro gas sheet carrier densities as well. These results are valuable for the future design optimizations of the advanced GaN and GaAs based monolithic microwave integrated circuit operating at high frequency and temperature.
    Original languageEnglish
    Pages149-152
    Number of pages4
    DOIs
    Publication statusPublished - Oct 2016
    Event11th European Microwave Integrated Circuits Conference - London, United Kingdom
    Duration: 3 Oct 20164 Oct 2016

    Conference

    Conference11th European Microwave Integrated Circuits Conference
    Abbreviated title(EuMIC)
    Country/TerritoryUnited Kingdom
    CityLondon
    Period3/10/164/10/16

    Keywords

    • temperature, AlGaN/GaN/SiC HEMT, AlGaAs/GaAs HEMT, intrinsic capacitances, frequency

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