Anomaly and intrinsic capacitance behaviour over temperature of AlGaN/GaN/SiC and AlGaAs/GaAs HEMTs for microwave application

Mohammad Abdul Alim; Ali Rezazadeh; Norshakila Haris; Christophe Gaquiere

doi:DOI: 10.1109/EuMIC.2016.7777512

Anomaly and intrinsic capacitance behaviour over temperature of AlGaN/GaN/SiC and AlGaAs/GaAs HEMTs for microwave application

Mohammad Abdul Alim, Ali Rezazadeh, Norshakila Haris, Christophe Gaquiere

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, we report anomaly and intrinsic capacitance behaviour over temperature of AlGaN/GaN/SiC and AlGaAs/GaAs high electron mobility transistors using on wafer measurement up to 50 GHz. Differences are observed; most notably that the trend of the intrinsic capacitances behaviour with temperature of the two device technologies are completely different. This anomaly continues for the other device parameter such as threshold voltage, two-dimension electro gas sheet carrier densities as well. These results are valuable for the future design optimizations of the advanced GaN and GaAs based monolithic microwave integrated circuit operating at high frequency and temperature.

Original language	English
Pages	149-152
Number of pages	4
DOIs	https://doi.org/DOI: 10.1109/EuMIC.2016.7777512
Publication status	Published - Oct 2016
Event	11th European Microwave Integrated Circuits Conference - London, United Kingdom Duration: 3 Oct 2016 → 4 Oct 2016

Conference

Conference	11th European Microwave Integrated Circuits Conference
Abbreviated title	(EuMIC)
Country/Territory	United Kingdom
City	London
Period	3/10/16 → 4/10/16

Keywords

temperature, AlGaN/GaN/SiC HEMT, AlGaAs/GaAs HEMT, intrinsic capacitances, frequency

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DOI: 10.1109/EuMIC.2016.7777512

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title = "Anomaly and intrinsic capacitance behaviour over temperature of AlGaN/GaN/SiC and AlGaAs/GaAs HEMTs for microwave application",

abstract = "In this paper, we report anomaly and intrinsic capacitance behaviour over temperature of AlGaN/GaN/SiC and AlGaAs/GaAs high electron mobility transistors using on wafer measurement up to 50 GHz. Differences are observed; most notably that the trend of the intrinsic capacitances behaviour with temperature of the two device technologies are completely different. This anomaly continues for the other device parameter such as threshold voltage, two-dimension electro gas sheet carrier densities as well. These results are valuable for the future design optimizations of the advanced GaN and GaAs based monolithic microwave integrated circuit operating at high frequency and temperature.",

keywords = "temperature, AlGaN/GaN/SiC HEMT, AlGaAs/GaAs HEMT, intrinsic capacitances, frequency",

author = "Alim, \{Mohammad Abdul\} and Ali Rezazadeh and Norshakila Haris and Christophe Gaquiere",

year = "2016",

month = oct,

doi = "DOI: 10.1109/EuMIC.2016.7777512",

language = "English",

pages = "149--152",

note = "11th European Microwave Integrated Circuits Conference , (EuMIC) ; Conference date: 03-10-2016 Through 04-10-2016",

}

Anomaly and intrinsic capacitance behaviour over temperature of AlGaN/GaN/SiC and AlGaAs/GaAs HEMTs for microwave application. / Alim, Mohammad Abdul; Rezazadeh, Ali; Haris, Norshakila et al.
2016. 149-152 Paper presented at 11th European Microwave Integrated Circuits Conference , London, United Kingdom.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Anomaly and intrinsic capacitance behaviour over temperature of AlGaN/GaN/SiC and AlGaAs/GaAs HEMTs for microwave application

AU - Alim, Mohammad Abdul

AU - Rezazadeh, Ali

AU - Haris, Norshakila

AU - Gaquiere, Christophe

PY - 2016/10

Y1 - 2016/10

N2 - In this paper, we report anomaly and intrinsic capacitance behaviour over temperature of AlGaN/GaN/SiC and AlGaAs/GaAs high electron mobility transistors using on wafer measurement up to 50 GHz. Differences are observed; most notably that the trend of the intrinsic capacitances behaviour with temperature of the two device technologies are completely different. This anomaly continues for the other device parameter such as threshold voltage, two-dimension electro gas sheet carrier densities as well. These results are valuable for the future design optimizations of the advanced GaN and GaAs based monolithic microwave integrated circuit operating at high frequency and temperature.

AB - In this paper, we report anomaly and intrinsic capacitance behaviour over temperature of AlGaN/GaN/SiC and AlGaAs/GaAs high electron mobility transistors using on wafer measurement up to 50 GHz. Differences are observed; most notably that the trend of the intrinsic capacitances behaviour with temperature of the two device technologies are completely different. This anomaly continues for the other device parameter such as threshold voltage, two-dimension electro gas sheet carrier densities as well. These results are valuable for the future design optimizations of the advanced GaN and GaAs based monolithic microwave integrated circuit operating at high frequency and temperature.

KW - temperature, AlGaN/GaN/SiC HEMT, AlGaAs/GaAs HEMT, intrinsic capacitances, frequency

U2 - DOI: 10.1109/EuMIC.2016.7777512

DO - DOI: 10.1109/EuMIC.2016.7777512

M3 - Paper

SP - 149

EP - 152

T2 - 11th European Microwave Integrated Circuits Conference

Y2 - 3 October 2016 through 4 October 2016

ER -

Anomaly and intrinsic capacitance behaviour over temperature of AlGaN/GaN/SiC and AlGaAs/GaAs HEMTs for microwave application

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