Antimony-doped tin(IV) oxide: Surface composition and electronic structure

R. G. Egdell, W. R. Flavell, P. Tavener

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Antimony-doped tin(IV) oxide Sn1-xSbxO2 prepared by a high-temperature (1300 K) solid-state synthetic procedure has been studied over the composition range0 <x <0.03by X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and high-resolution electron-energy-loss spectroscopy (HREELS). Pronounced enrichment by antimony close to the surface is evident from XPS with a heat of segregation approaching 30 kJ/mole. However, no increase in the surface free-carrier concentration is evident from the conduction-to-valence band intensity ratio in UPS or from the surface plasmon frequency in EELS. It is concluded that electrons associated with segregated Sb ions occupy a lone-pair-likesp hybrid surface state whose energy lies well below that of the conduction band. © 1984 Academic Press, Inc.
    Original languageEnglish
    Pages (from-to)345-354
    Number of pages9
    JournalJournal of Solid State Chemistry
    Volume51
    Issue number3
    Publication statusPublished - 1 Mar 1984

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