Approaches to CMOS integration of epitaxial gadolinium oxide high-k dielectrics

HDB Gottlob; T Echtermeyer; T Mollenhauer; M Schmidt; JK Efavi; T Wahlbrink; Max C Lemme; H Kurz; R Endres; Y Stefanov

Approaches to CMOS integration of epitaxial gadolinium oxide high-k dielectrics

HDB Gottlob, T Echtermeyer, T Mollenhauer, M Schmidt, JK Efavi, T Wahlbrink, Max C Lemme, H Kurz, R Endres, Y Stefanov

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Pages	150-153
Number of pages	4
Publication status	Published - 2006

Cite this

@inproceedings{ad88d1589e94491585dd4103abf03340,

title = "Approaches to CMOS integration of epitaxial gadolinium oxide high-k dielectrics",

author = "HDB Gottlob and T Echtermeyer and T Mollenhauer and M Schmidt and JK Efavi and T Wahlbrink and Lemme, {Max C} and H Kurz and R Endres and Y Stefanov",

year = "2006",

language = "English",

pages = "150--153",

booktitle = "Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European",

}

TY - GEN

T1 - Approaches to CMOS integration of epitaxial gadolinium oxide high-k dielectrics

AU - Gottlob, HDB

AU - Echtermeyer, T

AU - Mollenhauer, T

AU - Schmidt, M

AU - Efavi, JK

AU - Wahlbrink, T

AU - Lemme, Max C

AU - Kurz, H

AU - Endres, R

AU - Stefanov, Y

PY - 2006

Y1 - 2006

M3 - Conference contribution

SP - 150

EP - 153

BT - Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

ER -