AR coating design for GaAs/InAs Quantum Dots intermediate band Photovoltaic Devices

Edson Garduno Nolasco; E. Garduño-Nolasco; M. Missous

AR coating design for GaAs/InAs Quantum Dots intermediate band Photovoltaic Devices

Edson Garduno Nolasco, E. Garduño-Nolasco, M. Missous

The University of Manchester

Research output: Contribution to conference › Poster

Abstract

GaAs/InAs quantum dots with different inter-dot doping profiles devices were fabricated and characterized. Optical and electrical data were obtained. The geometry of the devices consist of cylindrical mesas with diameter of 250 m. The metal contacts are evaporated on both front (Ti(50nm)/Au(100 nm)) and back side (AuGe(50 nm) / Au(400nm)). The J-V characteristic for the devices have been obtained under 1 sun showing an increase of the short circuit current density (Jsc) by almost 40% in the undoped dots sample. We show that the use of 100 nm of Silicon Nitride (Si3N4) enhance the efficiency by about another 2.5% resulting in efficiencies up to 11.6% for single junction diodes.

Original language	English
Publication status	Published - Jul 2013
Event	UK Semiconductors 2013 - Sheffield Hallam University Duration: 3 Jul 2013 → 4 Jul 2013

Conference

Conference	UK Semiconductors 2013
City	Sheffield Hallam University
Period	3/07/13 → 4/07/13

Keywords

Solar cells, Quantum Dots, anti-reflective coating, Silicon Nitride

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@conference{3d73d45086f546e5b94f9e9f72efa451,

title = "AR coating design for GaAs/InAs Quantum Dots intermediate band Photovoltaic Devices",

abstract = "GaAs/InAs quantum dots with different inter-dot doping profiles devices were fabricated and characterized. Optical and electrical data were obtained. The geometry of the devices consist of cylindrical mesas with diameter of 250 m. The metal contacts are evaporated on both front (Ti(50nm)/Au(100 nm)) and back side (AuGe(50 nm) / Au(400nm)). The J-V characteristic for the devices have been obtained under 1 sun showing an increase of the short circuit current density (Jsc) by almost 40% in the undoped dots sample. We show that the use of 100 nm of Silicon Nitride (Si3N4) enhance the efficiency by about another 2.5% resulting in efficiencies up to 11.6% for single junction diodes.",

keywords = "Solar cells, Quantum Dots, anti-reflective coating, Silicon Nitride",

author = "{Garduno Nolasco}, Edson and E. Gardu{\~n}o-Nolasco and M. Missous",

year = "2013",

month = jul,

language = "English",

note = "UK Semiconductors 2013 ; Conference date: 03-07-2013 Through 04-07-2013",

}

TY - CONF

T1 - AR coating design for GaAs/InAs Quantum Dots intermediate band Photovoltaic Devices

AU - Garduno Nolasco, Edson

AU - Garduño-Nolasco, E.

AU - Missous, M.

PY - 2013/7

Y1 - 2013/7

N2 - GaAs/InAs quantum dots with different inter-dot doping profiles devices were fabricated and characterized. Optical and electrical data were obtained. The geometry of the devices consist of cylindrical mesas with diameter of 250 m. The metal contacts are evaporated on both front (Ti(50nm)/Au(100 nm)) and back side (AuGe(50 nm) / Au(400nm)). The J-V characteristic for the devices have been obtained under 1 sun showing an increase of the short circuit current density (Jsc) by almost 40% in the undoped dots sample. We show that the use of 100 nm of Silicon Nitride (Si3N4) enhance the efficiency by about another 2.5% resulting in efficiencies up to 11.6% for single junction diodes.

AB - GaAs/InAs quantum dots with different inter-dot doping profiles devices were fabricated and characterized. Optical and electrical data were obtained. The geometry of the devices consist of cylindrical mesas with diameter of 250 m. The metal contacts are evaporated on both front (Ti(50nm)/Au(100 nm)) and back side (AuGe(50 nm) / Au(400nm)). The J-V characteristic for the devices have been obtained under 1 sun showing an increase of the short circuit current density (Jsc) by almost 40% in the undoped dots sample. We show that the use of 100 nm of Silicon Nitride (Si3N4) enhance the efficiency by about another 2.5% resulting in efficiencies up to 11.6% for single junction diodes.

KW - Solar cells, Quantum Dots, anti-reflective coating, Silicon Nitride

M3 - Poster

T2 - UK Semiconductors 2013

Y2 - 3 July 2013 through 4 July 2013

ER -

AR coating design for GaAs/InAs Quantum Dots intermediate band Photovoltaic Devices

Abstract

Conference

Keywords

UN SDGs

Fingerprint

Cite this