As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy

Z. Sobiesierski; D. I. Westwood; P. J. Parbrook; K. B. Ozanyan; M. Hopkinson; C. R. Whitehouse

As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy

Z. Sobiesierski, D. I. Westwood, P. J. Parbrook, K. B. Ozanyan, M. Hopkinson, C. R. Whitehouse

Research output: Contribution to journal › Article › peer-review

Abstract

Reflectance anisotropy spectroscopy (RAS) has been used to investigate the As/P exchange reaction for group V stabilized InP(001) surfaces exposed to As2 and/or P2, under molecular beam epitaxy conditions. By comparing RAS spectra taken before, during, and after As2 exposure it is possible to confirm that the As/P exchange reaction is exactly reversible over a range of temperatures from 420 to 560 °C. Time-resolved RAS measurements of the reaction rate, monitored at an energy of 2.65 eV, indicate that the activation energy for the exchange is 1.23±0.05 eV. © 1997 American Institute of Physics.

Original language	English
Pages (from-to)	1423-1425
Number of pages	2
Journal	Applied Physics Letters
Volume	70
Issue number	11
Publication status	Published - 17 Mar 1997

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@article{0f3153e0e45448a8991dd9af7f287d75,

title = "As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy",

abstract = "Reflectance anisotropy spectroscopy (RAS) has been used to investigate the As/P exchange reaction for group V stabilized InP(001) surfaces exposed to As2 and/or P2, under molecular beam epitaxy conditions. By comparing RAS spectra taken before, during, and after As2 exposure it is possible to confirm that the As/P exchange reaction is exactly reversible over a range of temperatures from 420 to 560 °C. Time-resolved RAS measurements of the reaction rate, monitored at an energy of 2.65 eV, indicate that the activation energy for the exchange is 1.23±0.05 eV. {\textcopyright} 1997 American Institute of Physics.",

author = "Z. Sobiesierski and Westwood, {D. I.} and Parbrook, {P. J.} and Ozanyan, {K. B.} and M. Hopkinson and Whitehouse, {C. R.}",

year = "1997",

month = mar,

day = "17",

language = "English",

volume = "70",

pages = "1423--1425",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

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TY - JOUR

T1 - As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy

AU - Sobiesierski, Z.

AU - Westwood, D. I.

AU - Parbrook, P. J.

AU - Ozanyan, K. B.

AU - Hopkinson, M.

AU - Whitehouse, C. R.

PY - 1997/3/17

Y1 - 1997/3/17

N2 - Reflectance anisotropy spectroscopy (RAS) has been used to investigate the As/P exchange reaction for group V stabilized InP(001) surfaces exposed to As2 and/or P2, under molecular beam epitaxy conditions. By comparing RAS spectra taken before, during, and after As2 exposure it is possible to confirm that the As/P exchange reaction is exactly reversible over a range of temperatures from 420 to 560 °C. Time-resolved RAS measurements of the reaction rate, monitored at an energy of 2.65 eV, indicate that the activation energy for the exchange is 1.23±0.05 eV. © 1997 American Institute of Physics.

AB - Reflectance anisotropy spectroscopy (RAS) has been used to investigate the As/P exchange reaction for group V stabilized InP(001) surfaces exposed to As2 and/or P2, under molecular beam epitaxy conditions. By comparing RAS spectra taken before, during, and after As2 exposure it is possible to confirm that the As/P exchange reaction is exactly reversible over a range of temperatures from 420 to 560 °C. Time-resolved RAS measurements of the reaction rate, monitored at an energy of 2.65 eV, indicate that the activation energy for the exchange is 1.23±0.05 eV. © 1997 American Institute of Physics.

M3 - Article

SN - 0003-6951

VL - 70

SP - 1423

EP - 1425

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy

Abstract

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