Asymmetric Schottky contacts in bilayer MoS2 field effect transistors

Antonio Di Bartolomeo; Alessandro Grillo; Francesca Urban; Laura Iemmo; Filippo Giubileo; Giuseppe Luongo; Giampiero Amato; Luca Croin; Linfeng Sun; Shi-Jun Liang

Asymmetric Schottky contacts in bilayer MoS2 field effect transistors

Antonio Di Bartolomeo
, Alessandro Grillo
, Francesca Urban
, Laura Iemmo
, Filippo Giubileo
, Giuseppe Luongo
, Giampiero Amato
, Luca Croin
, Linfeng Sun
, Shi-Jun Liang

Materials Chemistry

Research output: Contribution to journal › Article › peer-review

Original language	Undefined
Pages (from-to)	1800657
Number of pages	1
Journal	Advanced Functional Materials
Volume	28
Issue number	28
Publication status	Published - 2018

Cite this

@article{548c742c68c0482ab8fade0ccd59c3ee,

title = "Asymmetric Schottky contacts in bilayer MoS2 field effect transistors",

author = "\{Di Bartolomeo\}, Antonio and Alessandro Grillo and Francesca Urban and Laura Iemmo and Filippo Giubileo and Giuseppe Luongo and Giampiero Amato and Luca Croin and Linfeng Sun and Shi-Jun Liang",

year = "2018",

language = "Undefined",

volume = "28",

pages = "1800657",

journal = "Advanced Functional Materials",

issn = "1616-3028",

publisher = "John Wiley \& Sons Ltd",

number = "28",

}

TY - JOUR

T1 - Asymmetric Schottky contacts in bilayer MoS2 field effect transistors

AU - Di Bartolomeo, Antonio

AU - Grillo, Alessandro

AU - Urban, Francesca

AU - Iemmo, Laura

AU - Giubileo, Filippo

AU - Luongo, Giuseppe

AU - Amato, Giampiero

AU - Croin, Luca

AU - Sun, Linfeng

AU - Liang, Shi-Jun

PY - 2018

Y1 - 2018

M3 - Article

SN - 1616-3028

VL - 28

SP - 1800657

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 28

ER -