Asymmetric Spacer Layer Tunnel In0.18Ga0.82As/AlAs (ASPAT) Diode using double quantum wells for dual functions: Detection and oscillation

K. N Zainul Ariffin; S. G. Muttlak; M. Abdullah; M. R R Abdullah; Y. Wang; M. Missous

doi:10.1109/UCMMT.2015.7460599

Asymmetric Spacer Layer Tunnel In_0.18Ga_0.82As/AlAs (ASPAT) Diode using double quantum wells for dual functions: Detection and oscillation

K. N Zainul Ariffin, S. G. Muttlak, M. Abdullah, M. R R Abdullah, Y. Wang, M. Missous

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

The work reported here proposes a new Asymmetric Spacer Layer Tunnel (ASPAT) Diode structure. The most interesting feature found from this study is the dual functions capability of the proposed device. In order to expand the device functionality, the new ASPAT has been designed with a thin potential barrier of AlAs sandwiched between double quantum wells of In_.18Ga_.82As. The work focuses on experimental and physical modelling of this novel In_0.18Ga_0.82As/AlAs double quantum well ASPAT diode on GaAs. To broaden and extend the operating frequency range, three different mesa size devices (100×100 μm², 30×30 μm² and 6×6 μm²) were fabricated and measured. The I-V characteristics of these devices show negative deferential resistance (NDR) region as well as zero bias turn-on feature which give this device capability to work as both a detector and oscillator depending upon bias.

Original language	English
Title of host publication	2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015
Publisher	IEEE
ISBN (Electronic)	9781467374347
DOIs	https://doi.org/10.1109/UCMMT.2015.7460599
Publication status	Published - 26 Apr 2016
Event	8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015 - Cardiff, United Kingdom Duration: 14 Sept 2015 → 15 Sept 2015

Conference

Conference	8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015
Country/Territory	United Kingdom
City	Cardiff
Period	14/09/15 → 15/09/15

Keywords

ASPAT
Diode
Double Quantum Wells
Microwave Detector
Oscillator
Tunnelling Device

Access to Document

10.1109/UCMMT.2015.7460599

Cite this

Ariffin, K. N. Z., Muttlak, S. G., Abdullah, M., Abdullah, M. R. R., Wang, Y., & Missous, M. (2016). Asymmetric Spacer Layer Tunnel In_0.18Ga_0.82As/AlAs (ASPAT) Diode using double quantum wells for dual functions: Detection and oscillation. In 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015 Article 7460599 IEEE. https://doi.org/10.1109/UCMMT.2015.7460599

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title = "Asymmetric Spacer Layer Tunnel In0.18Ga0.82As/AlAs (ASPAT) Diode using double quantum wells for dual functions: Detection and oscillation",

abstract = "The work reported here proposes a new Asymmetric Spacer Layer Tunnel (ASPAT) Diode structure. The most interesting feature found from this study is the dual functions capability of the proposed device. In order to expand the device functionality, the new ASPAT has been designed with a thin potential barrier of AlAs sandwiched between double quantum wells of In.18Ga.82As. The work focuses on experimental and physical modelling of this novel In0.18Ga0.82As/AlAs double quantum well ASPAT diode on GaAs. To broaden and extend the operating frequency range, three different mesa size devices (100×100 μm2, 30×30 μm2 and 6×6 μm2) were fabricated and measured. The I-V characteristics of these devices show negative deferential resistance (NDR) region as well as zero bias turn-on feature which give this device capability to work as both a detector and oscillator depending upon bias.",

keywords = "ASPAT, Diode, Double Quantum Wells, Microwave Detector, Oscillator, Tunnelling Device",

author = "Ariffin, \{K. N Zainul\} and Muttlak, \{S. G.\} and M. Abdullah and Abdullah, \{M. R R\} and Y. Wang and M. Missous",

year = "2016",

month = apr,

day = "26",

doi = "10.1109/UCMMT.2015.7460599",

language = "English",

booktitle = "2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015",

publisher = "IEEE",

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note = "8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015 ; Conference date: 14-09-2015 Through 15-09-2015",

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Ariffin, KNZ, Muttlak, SG, Abdullah, M, Abdullah, MRR, Wang, Y & Missous, M 2016, Asymmetric Spacer Layer Tunnel In_0.18Ga_0.82As/AlAs (ASPAT) Diode using double quantum wells for dual functions: Detection and oscillation. in 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015., 7460599, IEEE, 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015, Cardiff, United Kingdom, 14/09/15. https://doi.org/10.1109/UCMMT.2015.7460599

Asymmetric Spacer Layer Tunnel In_0.18Ga_0.82As/AlAs (ASPAT) Diode using double quantum wells for dual functions: Detection and oscillation. / Ariffin, K. N Zainul; Muttlak, S. G.; Abdullah, M. et al.
2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015. IEEE, 2016. 7460599.

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

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AU - Ariffin, K. N Zainul

AU - Muttlak, S. G.

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AU - Wang, Y.

AU - Missous, M.

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N2 - The work reported here proposes a new Asymmetric Spacer Layer Tunnel (ASPAT) Diode structure. The most interesting feature found from this study is the dual functions capability of the proposed device. In order to expand the device functionality, the new ASPAT has been designed with a thin potential barrier of AlAs sandwiched between double quantum wells of In.18Ga.82As. The work focuses on experimental and physical modelling of this novel In0.18Ga0.82As/AlAs double quantum well ASPAT diode on GaAs. To broaden and extend the operating frequency range, three different mesa size devices (100×100 μm2, 30×30 μm2 and 6×6 μm2) were fabricated and measured. The I-V characteristics of these devices show negative deferential resistance (NDR) region as well as zero bias turn-on feature which give this device capability to work as both a detector and oscillator depending upon bias.

AB - The work reported here proposes a new Asymmetric Spacer Layer Tunnel (ASPAT) Diode structure. The most interesting feature found from this study is the dual functions capability of the proposed device. In order to expand the device functionality, the new ASPAT has been designed with a thin potential barrier of AlAs sandwiched between double quantum wells of In.18Ga.82As. The work focuses on experimental and physical modelling of this novel In0.18Ga0.82As/AlAs double quantum well ASPAT diode on GaAs. To broaden and extend the operating frequency range, three different mesa size devices (100×100 μm2, 30×30 μm2 and 6×6 μm2) were fabricated and measured. The I-V characteristics of these devices show negative deferential resistance (NDR) region as well as zero bias turn-on feature which give this device capability to work as both a detector and oscillator depending upon bias.

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