Atom-by-Atom STEM Investigation of Defect Engineering in Graphene

Sarah Haigh; QM Ramasse; DM Kepapstoglou; FS Hage; T Susi; J Kotakoski; C Mangler; P Ayala; J Meyer; JA Hinks; S Donnelly

doi:doi:10.1017/S1431927614010411

Atom-by-Atom STEM Investigation of Defect Engineering in Graphene

Sarah Haigh, QM Ramasse, DM Kepapstoglou, FS Hage, T Susi, J Kotakoski, C Mangler, P Ayala, J Meyer, JA Hinks, S Donnelly

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1736-1737
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	20
Issue number	S3
DOIs	https://doi.org/doi:10.1017/S1431927614010411
Publication status	Published - 2014

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doi:10.1017/S1431927614010411

Cite this

@article{b20a2ed88a8c4910ae6adcdd3556e0d6,

title = "Atom-by-Atom STEM Investigation of Defect Engineering in Graphene",

author = "Sarah Haigh and QM Ramasse and DM Kepapstoglou and FS Hage and T Susi and J Kotakoski and C Mangler and P Ayala and J Meyer and JA Hinks and S Donnelly",

year = "2014",

doi = "doi:10.1017/S1431927614010411",

language = "English",

volume = "20",

pages = "1736--1737",

journal = "Microscopy and Microanalysis",

issn = "1435-8115",

publisher = "Oxford University Press",

number = "S3",

}

TY - JOUR

T1 - Atom-by-Atom STEM Investigation of Defect Engineering in Graphene

AU - Haigh, Sarah

AU - Ramasse, QM

AU - Kepapstoglou, DM

AU - Hage, FS

AU - Susi, T

AU - Kotakoski, J

AU - Mangler, C

AU - Ayala, P

AU - Meyer, J

AU - Hinks, JA

AU - Donnelly, S

PY - 2014

Y1 - 2014

U2 - doi:10.1017/S1431927614010411

DO - doi:10.1017/S1431927614010411

M3 - Article

SN - 1435-8115

VL - 20

SP - 1736

EP - 1737

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - S3

ER -