Atomic-scale Authentication with Resonant Tunneling Diodes

J. Roberts, I. E. Bagci, M. A.M. Zawawi, J. Sexton, N. Hulbert, Y. J. Noori, C. S. Woodhead, M. Missous, M. A. Migliorato, U. Roedig, R. J. Young

Research output: Contribution to journalArticlepeer-review


The room temperature electronic characteristics of resonant tunneling diodes (RTDs) containing AlAs/InGaAs quantum wells are studied. Differences in the peak current and voltages, associated with device-to-device variations in the structure and width of the quantum well are analyzed. A method to use these differences between devices is introduced and shown to uniquely identify each of the individual devices under test. This investigation shows that quantum confinement in RTDs allows them to operate as physical unclonable functions.

Original languageEnglish
Pages (from-to)1625-1629
Number of pages5
JournalMRS Advances
Issue number22
Publication statusPublished - 24 Feb 2016


  • electronic material
  • molecular beam epitaxy (MBE)
  • semiconducting


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