TY - JOUR
T1 - Author Correction
T2 - Exploring room temperature spin transport under band gap opening in bilayer graphene (Scientific Reports, (2023), 13, 1, (10343), 10.1038/s41598-023-36800-2)
AU - Anderson, Christopher R.
AU - Natera-Cordero, Noel
AU - Guarochico-Moreira, Victor H.
AU - Grigorieva, Irina V.
AU - Vera-Marun, Ivan J.
PY - 2023/9/11
Y1 - 2023/9/11
N2 - The original version of this Article contained an error in Figure 1 and 2. In Figure 1 the revised figure was not used in the article and in Figure 2b there was a typo in the y axis legend where “n × 10
–12 (cm
-2)” was changed to “n × 10
12 (cm
-2)”. The original Figures 1 and 2 accompanying legends appear below. (Figure presented.) (Figure presented.) Bilayer graphene transport channel and device. (a) Band structure of pristine BLG without (left) and with (right) an applied perpendicular electric displacement field. (b) Optical micrograph of our ~ 1 µm wide BLG graphene transport channels (blue) with contacts and top gate (in the measurement region). The charge (spin) transport current injection, I, and local (non-local) potential difference, V, measurement configuration. Inset: Schematic of the device heterostructure showing the Co/Au 1D edge contacts, with the graphene represented by the balls and sticks. (a) A 2D charge transport measurement map at RT showing the effect on the sheet resistance, (Formula presented.) , of applying a back gate voltage, (Formula presented.) , and top gate voltage, (Formula presented.). (b) The same charge transport measurements transformed into a map as a function of carrier density, n, and electric displacement field, D. In both maps the symbols are shown where the spin transport measurements were made. b(inset) Sheet resistance close and parallel to the Dirac ridge ((Formula presented.) ). In addition, in the Results section, under the subheading ‘Spin transport measurements’, “These are measurements where we sweep an in-plane magnetic field, which reverses the magnetisation of the 1D contacts and enables us to obtain either a parallel or antiparallel magnetic alignment between the injector and detector contacts.”, now reads “These are measurements where we sweep an in-plane magnetic field, B‖, applied along the direction of contacts, which reverses the magnetisation of the 1D contacts and enables us to obtain either a parallel or antiparallel magnetic alignment between the injector and detector contacts.” Also, “In doing so, we sweep a perpendicular magnetic field strength across a range of ±200 mT, which causes the diffusing electronic spins to experience Larmor precession, and fit the spin signal with the Hanle equation
22.” now reads “In doing so, we sweep magnetic field strength perpendicular to the plane of the graphene (see Figure 1b), B⊥, across a range of ±200 mT, which causes the diffusing electronic spins to experience Larmor precession, and fit the spin signal with the Hanle equation
22.” The original Article has been corrected.
AB - The original version of this Article contained an error in Figure 1 and 2. In Figure 1 the revised figure was not used in the article and in Figure 2b there was a typo in the y axis legend where “n × 10
–12 (cm
-2)” was changed to “n × 10
12 (cm
-2)”. The original Figures 1 and 2 accompanying legends appear below. (Figure presented.) (Figure presented.) Bilayer graphene transport channel and device. (a) Band structure of pristine BLG without (left) and with (right) an applied perpendicular electric displacement field. (b) Optical micrograph of our ~ 1 µm wide BLG graphene transport channels (blue) with contacts and top gate (in the measurement region). The charge (spin) transport current injection, I, and local (non-local) potential difference, V, measurement configuration. Inset: Schematic of the device heterostructure showing the Co/Au 1D edge contacts, with the graphene represented by the balls and sticks. (a) A 2D charge transport measurement map at RT showing the effect on the sheet resistance, (Formula presented.) , of applying a back gate voltage, (Formula presented.) , and top gate voltage, (Formula presented.). (b) The same charge transport measurements transformed into a map as a function of carrier density, n, and electric displacement field, D. In both maps the symbols are shown where the spin transport measurements were made. b(inset) Sheet resistance close and parallel to the Dirac ridge ((Formula presented.) ). In addition, in the Results section, under the subheading ‘Spin transport measurements’, “These are measurements where we sweep an in-plane magnetic field, which reverses the magnetisation of the 1D contacts and enables us to obtain either a parallel or antiparallel magnetic alignment between the injector and detector contacts.”, now reads “These are measurements where we sweep an in-plane magnetic field, B‖, applied along the direction of contacts, which reverses the magnetisation of the 1D contacts and enables us to obtain either a parallel or antiparallel magnetic alignment between the injector and detector contacts.” Also, “In doing so, we sweep a perpendicular magnetic field strength across a range of ±200 mT, which causes the diffusing electronic spins to experience Larmor precession, and fit the spin signal with the Hanle equation
22.” now reads “In doing so, we sweep magnetic field strength perpendicular to the plane of the graphene (see Figure 1b), B⊥, across a range of ±200 mT, which causes the diffusing electronic spins to experience Larmor precession, and fit the spin signal with the Hanle equation
22.” The original Article has been corrected.
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UR - https://www.mendeley.com/catalogue/ff1063e9-3c9c-3eeb-b457-cf59264f7675/
U2 - 10.1038/s41598-023-42109-x
DO - 10.1038/s41598-023-42109-x
M3 - Article
C2 - 37696886
SN - 2045-2322
VL - 13
JO - Scientific Reports
JF - Scientific Reports
IS - 1
M1 - 14993
ER -