Band Gap Opening in Bilayer Graphene-CrCl3/CrBr3/CrI3 van der Waals Interfaces

Giulia Tenasini, David Soler-Delgado, Zhe Wang, Fengrui Yao, Dumitru Dumcenco, Enrico Giannini, Kenji Watanabe, Takashi Taniguchi, Christian Moulsdale, Aitor García-Ruiz Fuentes, Vladimir Fal'ko, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo

Research output: Contribution to journalArticlepeer-review

Abstract

We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX3; X=Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX3 takes place (reaching densities in excess of 1013 cm−2), and generates an electric field perpendicular to the interface that opens a band gap in BLG. We determine the gap from the activation energy of the conductivity and find excellent agreement with the latest theory accounting for the contribution of the sigma bands to the BLG dielectric susceptibility. We further show that for BLG/CrCl3 and BLG/CrBr3 the band gap can be extracted from the gate voltage dependence of the low-temperature conductivity, and use this finding to refine the gap dependence on magnetic field. Our results allow a quantitative comparison of the electronic properties of BLG with theoretical predictions and indicate that electrons occupying the CrX3 conduction band are correlated.
Original languageEnglish
JournalNano Letters
Publication statusAccepted/In press - 1 Aug 2022

Research Beacons, Institutes and Platforms

  • National Graphene Institute

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