TY - JOUR
T1 - Band Gap Opening in Bilayer Graphene-CrCl3/CrBr3/CrI3 van der Waals Interfaces
AU - Tenasini, Giulia
AU - Soler-Delgado, David
AU - Wang, Zhe
AU - Yao, Fengrui
AU - Dumcenco, Dumitru
AU - Giannini, Enrico
AU - Watanabe, Kenji
AU - Taniguchi, Takashi
AU - Moulsdale, Christian
AU - García-Ruiz Fuentes, Aitor
AU - Fal'ko, Vladimir
AU - Gutiérrez-Lezama, Ignacio
AU - Morpurgo, Alberto F.
PY - 2022/8/1
Y1 - 2022/8/1
N2 - We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX3; X=Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX3 takes place (reaching densities in excess of 1013 cm−2), and generates an electric field perpendicular to the interface that opens a band gap in BLG. We determine the gap from the activation energy of the conductivity and find excellent agreement with the latest theory accounting for the contribution of the sigma bands to the BLG dielectric susceptibility. We further show that for BLG/CrCl3 and BLG/CrBr3 the band gap can be extracted from the gate voltage dependence of the low-temperature conductivity, and use this finding to refine the gap dependence on magnetic field. Our results allow a quantitative comparison of the electronic properties of BLG with theoretical predictions and indicate that electrons occupying the CrX3 conduction band are correlated.
AB - We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX3; X=Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX3 takes place (reaching densities in excess of 1013 cm−2), and generates an electric field perpendicular to the interface that opens a band gap in BLG. We determine the gap from the activation energy of the conductivity and find excellent agreement with the latest theory accounting for the contribution of the sigma bands to the BLG dielectric susceptibility. We further show that for BLG/CrCl3 and BLG/CrBr3 the band gap can be extracted from the gate voltage dependence of the low-temperature conductivity, and use this finding to refine the gap dependence on magnetic field. Our results allow a quantitative comparison of the electronic properties of BLG with theoretical predictions and indicate that electrons occupying the CrX3 conduction band are correlated.
M3 - Article
SN - 1530-6984
JO - Nano Letters
JF - Nano Letters
ER -