Band gaps of wurtzite ScxGa1-xN alloys

H. C. L. Tsui, L. E. Goff, S. K. Rhode, S. Pereira, H. E. Beere, I. Farrer, C. A. Nicoll, D. A. Ritchie, M. A. Moram

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    Optical transmittance measurements on epitaxial, phase-pure, wurtzite-structure ScxGa1−xN films with 0 ≤ x ≤ 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I1- and I2-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for ScxGa1−xN films, which additionally contained nanoscale lamellar inclusions of the zinc-blende phase, as revealed by aberration-corrected scanning transmission electron microscopy. Therefore, we conclude that the apparent reduction in ScxGa1−xN band gaps with increasing x is an artefact resulting from the presence of nanoscale zinc-blende inclusions.
    Original languageEnglish
    Article number132103
    JournalApplied Physics Letters
    Issue number13
    Publication statusPublished - 30 Mar 2015


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