Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect

Eduardo V. Castro, K. S. Novoselov, S. V. Morozov, N. M R Peres, J. M B Lopes Dos Santos, Johan Nilsson, F. Guinea, A. K. Geim, A. H Castro Neto

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to midinfrared energies by using fields of 1V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime. © 2007 The American Physical Society.
    Original languageEnglish
    Article number216802
    JournalPhysical Review Letters
    Volume99
    Issue number21
    DOIs
    Publication statusPublished - 20 Nov 2007

    Fingerprint

    Dive into the research topics of 'Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect'. Together they form a unique fingerprint.

    Cite this