Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations

M. Szyniszewski, E. Mostaani, N. D. Drummond, V. I. Fal'Ko

    Research output: Contribution to journalArticlepeer-review

    106 Downloads (Pure)

    Abstract

    Excitonic effects play a particularly important role in the optoelectronic behavior of two-dimensional (2D) semiconductors. To facilitate the interpretation of experimental photoabsorption and photoluminescence spectra we provide statistically exact diffusion quantum Monte Carlo binding-energy data for Mott-Wannier models of excitons, trions, and biexcitons in 2D semiconductors. We also provide contact pair densities to allow a description of contact (exchange) interactions between charge carriers using first-order perturbation theory. Our data indicate that the binding energy of a trion is generally larger than that of a biexciton in 2D semiconductors. We provide interpolation formulas giving the binding energy and contact density of 2D semiconductors as functions of the electron and hole effective masses and the in-plane polarizability.

    Original languageEnglish
    Article number081301
    JournalPhysical Review B (Condensed Matter and Materials Physics)
    Volume95
    Issue number8
    DOIs
    Publication statusPublished - 7 Feb 2017

    Research Beacons, Institutes and Platforms

    • National Graphene Institute

    Fingerprint

    Dive into the research topics of 'Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations'. Together they form a unique fingerprint.

    Cite this