Bistability of hydrogen donors in proton-implanted GeSi alloy

Yu M. Pokotilo; A. N. Petukh; V. V. Litvinov; V. P. Markevich; A. R. Peaker; N. V. Abrosimov

doi:10.1134/S106378500806014X

Bistability of hydrogen donors in proton-implanted GeSi alloy

Yu M. Pokotilo, A. N. Petukh, V. V. Litvinov, V. P. Markevich, A. R. Peaker, N. V. Abrosimov

Research output: Contribution to journal › Article › peer-review

Abstract

Shallow hydrogen donors (H-donors) were formed in a Ge_{1 - x} Si _x (x = 0.012) alloy by the implantation of low-energy protons followed by heat treatment at 275°C The electrical properties of these donors have been studied using the method of capacitance-voltage characteristics. It is established that a certain fraction of the H-donors exhibit bistability, whereby their concentration changes reversibly when the sample temperature is cycled within 100-200°C. The properties of reversible H-donors in germanium are analogous to those of the bistable H-donors in silicon.

Original language	English
Pages (from-to)	498-499
Number of pages	2
Journal	TECHNICAL PHYSICS LETTERS
Volume	34
Issue number	6
DOIs	https://doi.org/10.1134/S106378500806014X
Publication status	Published - 1 Jun 2008

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abstract = "Shallow hydrogen donors (H-donors) were formed in a Ge1 - x Si x (x = 0.012) alloy by the implantation of low-energy protons followed by heat treatment at 275°C The electrical properties of these donors have been studied using the method of capacitance-voltage characteristics. It is established that a certain fraction of the H-donors exhibit bistability, whereby their concentration changes reversibly when the sample temperature is cycled within 100-200°C. The properties of reversible H-donors in germanium are analogous to those of the bistable H-donors in silicon.",

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AU - Pokotilo, Yu M.

AU - Petukh, A. N.

AU - Litvinov, V. V.

AU - Markevich, V. P.

AU - Peaker, A. R.

AU - Abrosimov, N. V.

PY - 2008/6/1

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N2 - Shallow hydrogen donors (H-donors) were formed in a Ge1 - x Si x (x = 0.012) alloy by the implantation of low-energy protons followed by heat treatment at 275°C The electrical properties of these donors have been studied using the method of capacitance-voltage characteristics. It is established that a certain fraction of the H-donors exhibit bistability, whereby their concentration changes reversibly when the sample temperature is cycled within 100-200°C. The properties of reversible H-donors in germanium are analogous to those of the bistable H-donors in silicon.

AB - Shallow hydrogen donors (H-donors) were formed in a Ge1 - x Si x (x = 0.012) alloy by the implantation of low-energy protons followed by heat treatment at 275°C The electrical properties of these donors have been studied using the method of capacitance-voltage characteristics. It is established that a certain fraction of the H-donors exhibit bistability, whereby their concentration changes reversibly when the sample temperature is cycled within 100-200°C. The properties of reversible H-donors in germanium are analogous to those of the bistable H-donors in silicon.

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Bistability of hydrogen donors in proton-implanted GeSi alloy

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