Bistability of hydrogen donors in proton-implanted GeSi alloy

Yu M. Pokotilo, A. N. Petukh, V. V. Litvinov, V. P. Markevich, A. R. Peaker, N. V. Abrosimov

    Research output: Contribution to journalArticlepeer-review


    Shallow hydrogen donors (H-donors) were formed in a Ge1 - x Si x (x = 0.012) alloy by the implantation of low-energy protons followed by heat treatment at 275°C The electrical properties of these donors have been studied using the method of capacitance-voltage characteristics. It is established that a certain fraction of the H-donors exhibit bistability, whereby their concentration changes reversibly when the sample temperature is cycled within 100-200°C. The properties of reversible H-donors in germanium are analogous to those of the bistable H-donors in silicon.

    Original languageEnglish
    Pages (from-to)498-499
    Number of pages2
    Issue number6
    Publication statusPublished - 1 Jun 2008

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