Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

J. J. Hamilton, K. J. Kirkby, N. E B Cowern, E. J H Collart, M. Bersani, D. Giubertoni, S. Gennaro, A. Parisini

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Preamorphization of ultrashallow implanted boron in silicon on insulator is optimized to produce an abrupt boxlike doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface to minimize interstitials while leaving a single-crystal seed to support solid-phase epitaxy. Results support the idea that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink.

    Original languageEnglish
    Article number092122
    JournalApplied Physics Letters
    Volume91
    Issue number9
    DOIs
    Publication statusPublished - 2007

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