TY - GEN
T1 - Boron-oxygen related light-induced degradation of Si solar cells
T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
AU - Jafari, Saman
AU - Zhu, Yan
AU - Rougieux, Fiacre
AU - De Guzman, Joyce Ann T.
AU - Markevich, Vladimir P.
AU - Peaker, Anthony R.
AU - Hameiri, Ziv
N1 - Funding Information:
This work was supported by the Australian Government through the Australian Renewable Energy Agency (ARENA, Grant 2017/RND001).
Publisher Copyright:
© 2020 IEEE.
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2020/6/14
Y1 - 2020/6/14
N2 - Light-induced degradation (LID) has a considerable impact on solar cells made from boron-doped Czochralski (Cz) grown silicon wafers. Thus, a great effort has been made to investigate this type of degradation. Recently, it has been suggested that minority carrier traps are acting as precursors to the LID-related defects and that the enhanced recombination might occur through a trap-assisted Auger process. In this study, we investigate the former suggestion using photoconductance measurement of boron-doped Cz wafers in the course of LID. A clear anti-correlation between minority carrier trap density and LID extent has been found. We detect minority carrier traps in the dark annealed state which disappear upon LID. A time constant of 55\pm 5 min for trap annihilation under 1 sun illumination at 60 °C has been determined, in agreement with previous findings regarding the LID-related defects' formation rate. Additionally, the kinetic of the traps is studied at different temperatures ranging from 25 °C to 100 °C. This study highlights the fact that despite decades of LID-related research, new insights can be obtained when using new approaches, such as those presented in this paper.
AB - Light-induced degradation (LID) has a considerable impact on solar cells made from boron-doped Czochralski (Cz) grown silicon wafers. Thus, a great effort has been made to investigate this type of degradation. Recently, it has been suggested that minority carrier traps are acting as precursors to the LID-related defects and that the enhanced recombination might occur through a trap-assisted Auger process. In this study, we investigate the former suggestion using photoconductance measurement of boron-doped Cz wafers in the course of LID. A clear anti-correlation between minority carrier trap density and LID extent has been found. We detect minority carrier traps in the dark annealed state which disappear upon LID. A time constant of 55\pm 5 min for trap annihilation under 1 sun illumination at 60 °C has been determined, in agreement with previous findings regarding the LID-related defects' formation rate. Additionally, the kinetic of the traps is studied at different temperatures ranging from 25 °C to 100 °C. This study highlights the fact that despite decades of LID-related research, new insights can be obtained when using new approaches, such as those presented in this paper.
KW - Boron-oxygen degradation
KW - Light induced degradation
KW - traps
UR - http://www.scopus.com/inward/record.url?scp=85099575336&partnerID=8YFLogxK
U2 - 10.1109/PVSC45281.2020.9300371
DO - 10.1109/PVSC45281.2020.9300371
M3 - Conference contribution
AN - SCOPUS:85099575336
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 689
EP - 692
BT - 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PB - IEEE
Y2 - 15 June 2020 through 21 August 2020
ER -
