Bottom-up, chip-scale engineering of low threshold, multi-quantum well microring lasers

Wei Wen Wong, Naiyin Wang, Bryan D Esser, Stephen Church, Mark Lockrey, Igor Aharonovich, Patrick Parkinson, Joanne Etheridge, Chennupati Jagadish, Hark Hoe Tan

Research output: Contribution to journalArticlepeer-review


Integrated, on-chip lasers are vital building blocks in future optoelectronic and nanophotonic circuitry. Specifically, III-V materials that are of technological relevance attract considerable attention. However, traditional micro-cavity laser fabrication techniques, including top-down etching and bottom-up catalytic growth, often result in undesirable cavity geometries with poor scalability and reproducibility. Here, we utilize the selective area epitaxy method to deterministically engineer thousands of micro-ring lasers on a single chip. Specifically, we realize a catalyst-free, epitaxial growth of a technologically-critical material, InAsP/InP, in a ring-like cavity with embedded multi-quantum wells heterostructures. We elucidate a detailed growth mechanism and leverage the capability to deterministically control the adatom diffusion lengths on selected crystal facets to reproducibly achieve ultra-smooth cavity sidewalls. The engineered devices exhibit tunable emission wavelength in the telecommunication O-band and show low-threshold lasing with over 80% device efficacy across the chip. Our work marks a significant milestone towards the implementation of fully integrated III-V materials platform for next-generation high-density integrated photonic and optoelectronic circuits.
Original languageEnglish
JournalACS Nano
Early online date14 Jul 2023
Publication statusE-pub ahead of print - 14 Jul 2023


  • selective area epitaxy
  • III-V microring lasers
  • III-V quantum well lasers
  • whispering-gallery mode lasers
  • integrated photonics


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