Breakdown of the quantum Hall effect in graphene

T. J B M Janssen; A. Tzalenchuk; A. M R Baker; J. A. Alexander-Webber; R. J. Nicholas; R. Yakimova; S. Lara-Avila; S. Kubatkin; S. Kopylov; V. I. Fal'ko

doi:10.1109/CPEM.2012.6251027

Breakdown of the quantum Hall effect in graphene

T. J B M Janssen^*, A. Tzalenchuk, A. M R Baker, J. A. Alexander-Webber, R. J. Nicholas, R. Yakimova, S. Lara-Avila, S. Kubatkin, S. Kopylov, V. I. Fal'ko

^*Corresponding author for this work

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard.

Original language	English
Title of host publication	2012 Conference on Precision Electromagnetic Measurements, CPEM 2012
Pages	510-511
Number of pages	2
DOIs	https://doi.org/10.1109/CPEM.2012.6251027
Publication status	Published - 2012
Event	2012 Conference on Precision Electromagnetic Measurements, CPEM 2012 - Washington, DC, United States Duration: 1 Jul 2012 → 6 Jul 2012

Conference

Conference	2012 Conference on Precision Electromagnetic Measurements, CPEM 2012
Country/Territory	United States
City	Washington, DC
Period	1/07/12 → 6/07/12

Keywords

Graphene
precision measurement
quantum Hall effect
resistance standard

Research Beacons, Institutes and Platforms

National Graphene Institute

Access to Document

10.1109/CPEM.2012.6251027

Cite this

Janssen, T. J. B. M., Tzalenchuk, A., Baker, A. M. R., Alexander-Webber, J. A., Nicholas, R. J., Yakimova, R., Lara-Avila, S., Kubatkin, S., Kopylov, S., & Fal'ko, V. I. (2012). Breakdown of the quantum Hall effect in graphene. In 2012 Conference on Precision Electromagnetic Measurements, CPEM 2012 (pp. 510-511). Article 6251027 https://doi.org/10.1109/CPEM.2012.6251027

@inproceedings{cadf3fcf3d1f4a3788d6228f4196a0f6,

title = "Breakdown of the quantum Hall effect in graphene",

abstract = "We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard.",

keywords = "Graphene, precision measurement, quantum Hall effect, resistance standard",

author = "Janssen, \{T. J B M\} and A. Tzalenchuk and Baker, \{A. M R\} and Alexander-Webber, \{J. A.\} and Nicholas, \{R. J.\} and R. Yakimova and S. Lara-Avila and S. Kubatkin and S. Kopylov and Fal'ko, \{V. I.\}",

year = "2012",

doi = "10.1109/CPEM.2012.6251027",

language = "English",

isbn = "9781467304399",

pages = "510--511",

booktitle = "2012 Conference on Precision Electromagnetic Measurements, CPEM 2012",

note = "2012 Conference on Precision Electromagnetic Measurements, CPEM 2012 ; Conference date: 01-07-2012 Through 06-07-2012",

}

Janssen, TJBM, Tzalenchuk, A, Baker, AMR, Alexander-Webber, JA, Nicholas, RJ, Yakimova, R, Lara-Avila, S, Kubatkin, S, Kopylov, S & Fal'ko, VI 2012, Breakdown of the quantum Hall effect in graphene. in 2012 Conference on Precision Electromagnetic Measurements, CPEM 2012., 6251027, pp. 510-511, 2012 Conference on Precision Electromagnetic Measurements, CPEM 2012, Washington, DC, United States, 1/07/12. https://doi.org/10.1109/CPEM.2012.6251027

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T1 - Breakdown of the quantum Hall effect in graphene

AU - Janssen, T. J B M

AU - Tzalenchuk, A.

AU - Baker, A. M R

AU - Alexander-Webber, J. A.

AU - Nicholas, R. J.

AU - Yakimova, R.

AU - Lara-Avila, S.

AU - Kubatkin, S.

AU - Kopylov, S.

AU - Fal'ko, V. I.

PY - 2012

Y1 - 2012

N2 - We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard.

AB - We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard.

KW - Graphene

KW - precision measurement

KW - quantum Hall effect

KW - resistance standard

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U2 - 10.1109/CPEM.2012.6251027

DO - 10.1109/CPEM.2012.6251027

M3 - Conference contribution

AN - SCOPUS:84866787234

SN - 9781467304399

SP - 510

EP - 511

BT - 2012 Conference on Precision Electromagnetic Measurements, CPEM 2012

T2 - 2012 Conference on Precision Electromagnetic Measurements, CPEM 2012

Y2 - 1 July 2012 through 6 July 2012

ER -

Breakdown of the quantum Hall effect in graphene

Abstract

Conference

Keywords

Research Beacons, Institutes and Platforms

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