Broad Band Phase Sensitive Single InP Nanowire Photoconductive Terahertz Detectors

Kun Peng, Patrick Parkinson, Jessica Boland, Qian Gao, Yesaya C. Wenas, Christopher L . Davies, Ziyuan Li, Lan Fu, Michael B. Johnston, Hark H. Tan, Chennupati Jagadish

    Research output: Contribution to journalArticlepeer-review

    30 Downloads (Pure)


    Terahertz time-domain spectroscopy (THz-TDS) has emerged as a powerful tool for materials characterization and imaging. A trend towards size reduction, higher component integration and performance improvement for advanced THz-TDS systems is of increasing interest. The use of single semiconducting nanowires for terahertz (THz) detection is a nascent field that has great potential to realize future highly-integrated THz systems. In order to develop such components, optimized material optoelectronic properties and careful device design are necessary. Here, we present antenna-optimized photoconductive detectors based on single InP nanowires with superior properties of high carrier mobility (~1260 cm2V–1s–1) and low dark current (~10 pA), which exhibit excellent sensitivity and broadband performance. We demonstrate that these nanowire THz detectors can provide high quality time-domain spectra for materials characterization in a THz-TDS system, a critical step towards future application in advanced THz-TDS system with high spectral and spatial resolution
    Original languageEnglish
    Pages (from-to)4925-4931
    JournalNano Letters
    Issue number8
    Early online date14 Jul 2016
    Publication statusPublished - 14 Jul 2016


    Dive into the research topics of 'Broad Band Phase Sensitive Single InP Nanowire Photoconductive Terahertz Detectors'. Together they form a unique fingerprint.

    Cite this