Broadband X-band low noise amplifier based on 70 nm GaAs metamorphic high electron mobility transistor technology for deep space and satellite communication networks and oscillation issues

S. Bhaumik, D. Kettle

    Research output: Contribution to journalArticlepeer-review

    Abstract

    An X-band low noise amplifier (LNA) using the 70 nm GaAs metamorphic high electron mobility transistors (mHEMT) process available from OMMIC has been reported. The foundry model-based simulated response, on-wafer measurements of the fabricated monolithic microwave integrated circuit (MMIC) LNA and measured data of packaged LNA at room temperature and 100 K have been shown. At room temperature, the packaged LNA exhibits a flat gain more than 26 dB from 7 to 11 GHz with less than 1 dB noise figure at room temperature. The input and output return losses are better than -20 and -10 dB, respectively, between 7.5 and 8.5 GHz. It exhibits linear response with output 1 dB compression point of 1 dBm. MMIC dimension has been limited to 1.5 mm×1 mm. Off-chip inductance in the form of a modelled bondwire has been used to attain the improved input return loss and noise matching. Two figure-of-merits have been proposed and justified, and a comparative study of the overall performances of X-band LNAs with emerging technologies has been made. At 100 K, the LNA shows major improvement of the input and output return losses. © 2010 © The Institution of Engineering and Technology.
    Original languageEnglish
    Article numberIMAPCH000004000009001208000001
    Pages (from-to)1208-1215
    Number of pages7
    JournalIET Microwaves, Antennas and Propagation
    Volume4
    Issue number9
    DOIs
    Publication statusPublished - Sept 2010

    Keywords

    • III-V semiconductors
    • broadband networks
    • gallium arsenide
    • high electron mobility transistors
    • low noise amplifiers
    • satellite communication
    • space communication links
    • GaAs
    • broadband X-band low noise amplifier
    • deep space communication networks
    • metamorphic high electron mobility transistor
    • oscillation issues
    • satellite communication networks
    • wavelength 70 nm

    Fingerprint

    Dive into the research topics of 'Broadband X-band low noise amplifier based on 70 nm GaAs metamorphic high electron mobility transistor technology for deep space and satellite communication networks and oscillation issues'. Together they form a unique fingerprint.

    Cite this