Abstract
We describe some characterization methods for the determination of qualitative parameters of superconducting Josephson effect devices. We propose the introduction of a new method to characterize the junctions at the ambient temperature. This method accounts the effects of the single electron tunneling. We also used SEM techniques for technological analysis of the devices.
| Translated title of the contribution | Characterization of superconducting devices: SIS junctions |
|---|---|
| Original language | Italian |
| Pages (from-to) | 157-162 |
| Number of pages | 6 |
| Journal | Note, recensioni, notizie |
| Volume | 37 |
| Issue number | 3-4 |
| Publication status | Published - Jul 1988 |