Carbon-related centres in irradiated SiGe alloys

S. Hayama; G. Davies; J. Tan; V. P. Markevich; A. R. Peaker; J. Evans-Freeman; K. D. Vernon-Parry; N. V. Abrosimov

doi:10.1016/j.physb.2003.09.222

Carbon-related centres in irradiated SiGe alloys

S. Hayama^*, G. Davies, J. Tan, V. P. Markevich, A. R. Peaker, J. Evans-Freeman, K. D. Vernon-Parry, N. V. Abrosimov

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report measurements on the C_i-O_i 'C-centre' in Czochralski-grown Si_1-xGe_x (x≤0.06), using the complementary techniques of photoluminescence (PL) and deep-level transient spectroscopy (DLTS). Both techniques show that the donor level of the C-centre in SiGe alloys shifts towards the valence band with increasing x. Unexpectedly, the shift rate of d(ΔH_n)/dx = +550 meV detected using DLTS is found to be 1.6 times greater than that from PL measurements. Alloy broadening of the PL line and the DLTS signal are similar, and suggest that the C-centre is preferentially found in a Ge-rich environment.

Original language	English
Pages (from-to)	823-826
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	340-342
Early online date	5 Dec 2003
DOIs	https://doi.org/10.1016/j.physb.2003.09.222
Publication status	Published - 31 Dec 2003
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 28 Jul 2003 → 1 Aug 2003

Keywords

Defects
DLTS
Photoluminescence
SiGe alloys

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10.1016/j.physb.2003.09.222

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@article{dc7c677e184145988d9adcec5a525f91,

title = "Carbon-related centres in irradiated SiGe alloys",

abstract = "We report measurements on the Ci-Oi 'C-centre' in Czochralski-grown Si1-xGex (x≤0.06), using the complementary techniques of photoluminescence (PL) and deep-level transient spectroscopy (DLTS). Both techniques show that the donor level of the C-centre in SiGe alloys shifts towards the valence band with increasing x. Unexpectedly, the shift rate of d(ΔHn)/dx = +550 meV detected using DLTS is found to be 1.6 times greater than that from PL measurements. Alloy broadening of the PL line and the DLTS signal are similar, and suggest that the C-centre is preferentially found in a Ge-rich environment.",

keywords = "Defects, DLTS, Photoluminescence, SiGe alloys",

author = "S. Hayama and G. Davies and J. Tan and Markevich, {V. P.} and Peaker, {A. R.} and J. Evans-Freeman and Vernon-Parry, {K. D.} and Abrosimov, {N. V.}",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.222",

language = "English",

volume = "340-342",

pages = "823--826",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier BV",

note = "Proceedings of the 22nd International Conference on Defects in (ICDS-22), ICDS-22 ; Conference date: 28-07-2003 Through 01-08-2003",

}

TY - JOUR

T1 - Carbon-related centres in irradiated SiGe alloys

AU - Hayama, S.

AU - Davies, G.

AU - Tan, J.

AU - Markevich, V. P.

AU - Peaker, A. R.

AU - Evans-Freeman, J.

AU - Vernon-Parry, K. D.

AU - Abrosimov, N. V.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - We report measurements on the Ci-Oi 'C-centre' in Czochralski-grown Si1-xGex (x≤0.06), using the complementary techniques of photoluminescence (PL) and deep-level transient spectroscopy (DLTS). Both techniques show that the donor level of the C-centre in SiGe alloys shifts towards the valence band with increasing x. Unexpectedly, the shift rate of d(ΔHn)/dx = +550 meV detected using DLTS is found to be 1.6 times greater than that from PL measurements. Alloy broadening of the PL line and the DLTS signal are similar, and suggest that the C-centre is preferentially found in a Ge-rich environment.

AB - We report measurements on the Ci-Oi 'C-centre' in Czochralski-grown Si1-xGex (x≤0.06), using the complementary techniques of photoluminescence (PL) and deep-level transient spectroscopy (DLTS). Both techniques show that the donor level of the C-centre in SiGe alloys shifts towards the valence band with increasing x. Unexpectedly, the shift rate of d(ΔHn)/dx = +550 meV detected using DLTS is found to be 1.6 times greater than that from PL measurements. Alloy broadening of the PL line and the DLTS signal are similar, and suggest that the C-centre is preferentially found in a Ge-rich environment.

KW - Defects

KW - DLTS

KW - Photoluminescence

KW - SiGe alloys

UR - http://www.scopus.com/inward/record.url?scp=0347764755&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2003.09.222

DO - 10.1016/j.physb.2003.09.222

M3 - Conference article

AN - SCOPUS:0347764755

SN - 0921-4526

VL - 340-342

SP - 823

EP - 826

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Carbon-related centres in irradiated SiGe alloys

Abstract

Keywords

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