Carrier dynamic measurement of Be doped multi-quantum-well InGaAs-InAlAs material systems at 1550 nm for THz applications

D. Saeedkia; I. Kostakis; M. Missous

doi:10.1109/irmmw-THz.2011.6105007

Carrier dynamic measurement of Be doped multi-quantum-well InGaAs-InAlAs material systems at 1550 nm for THz applications

D. Saeedkia, I. Kostakis, M. Missous

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Carrier dynamic for Be doped multi-quantum-well InGaAs-InAlAs material systems are measured using an infrared pump-probe measurement system at 1550 nm wavelength range. The carrier life-time for as-grown materials and for materials with two different levels of Be doping annealed at different temperatures are measured and the results are compared. Subpicosecond carrier lifetimes are obtained. © 2011 IEEE.

Original language	English
Title of host publication	IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves\|IRMMW-THz - Int. Conf. Infrared, Millimeter, Terahertz Waves
Publisher	IEEE
ISBN (Print)	9781457705090
DOIs	https://doi.org/10.1109/irmmw-THz.2011.6105007
Publication status	Published - 2011
Event	36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011 - Houston, TX Duration: 1 Jul 2011 → …

Conference

Conference	36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011
City	Houston, TX
Period	1/07/11 → …

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10.1109/irmmw-THz.2011.6105007

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Saeedkia, D., Kostakis, I., & Missous, M. (2011). Carrier dynamic measurement of Be doped multi-quantum-well InGaAs-InAlAs material systems at 1550 nm for THz applications. In IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves|IRMMW-THz - Int. Conf. Infrared, Millimeter, Terahertz Waves IEEE. https://doi.org/10.1109/irmmw-THz.2011.6105007

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title = "Carrier dynamic measurement of Be doped multi-quantum-well InGaAs-InAlAs material systems at 1550 nm for THz applications",

abstract = "Carrier dynamic for Be doped multi-quantum-well InGaAs-InAlAs material systems are measured using an infrared pump-probe measurement system at 1550 nm wavelength range. The carrier life-time for as-grown materials and for materials with two different levels of Be doping annealed at different temperatures are measured and the results are compared. Subpicosecond carrier lifetimes are obtained. {\textcopyright} 2011 IEEE.",

author = "D. Saeedkia and I. Kostakis and M. Missous",

year = "2011",

doi = "10.1109/irmmw-THz.2011.6105007",

language = "English",

isbn = "9781457705090",

booktitle = "IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves|IRMMW-THz - Int. Conf. Infrared, Millimeter, Terahertz Waves",

publisher = "IEEE",

address = "United States",

note = "36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011 ; Conference date: 01-07-2011",

}

Saeedkia, D, Kostakis, I & Missous, M 2011, Carrier dynamic measurement of Be doped multi-quantum-well InGaAs-InAlAs material systems at 1550 nm for THz applications. in IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves|IRMMW-THz - Int. Conf. Infrared, Millimeter, Terahertz Waves. IEEE, 36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011, Houston, TX, 1/07/11. https://doi.org/10.1109/irmmw-THz.2011.6105007

Carrier dynamic measurement of Be doped multi-quantum-well InGaAs-InAlAs material systems at 1550 nm for THz applications. / Saeedkia, D.; Kostakis, I.; Missous, M.
IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves|IRMMW-THz - Int. Conf. Infrared, Millimeter, Terahertz Waves. IEEE, 2011.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Carrier dynamic measurement of Be doped multi-quantum-well InGaAs-InAlAs material systems at 1550 nm for THz applications

AU - Saeedkia, D.

AU - Kostakis, I.

AU - Missous, M.

PY - 2011

Y1 - 2011

N2 - Carrier dynamic for Be doped multi-quantum-well InGaAs-InAlAs material systems are measured using an infrared pump-probe measurement system at 1550 nm wavelength range. The carrier life-time for as-grown materials and for materials with two different levels of Be doping annealed at different temperatures are measured and the results are compared. Subpicosecond carrier lifetimes are obtained. © 2011 IEEE.

AB - Carrier dynamic for Be doped multi-quantum-well InGaAs-InAlAs material systems are measured using an infrared pump-probe measurement system at 1550 nm wavelength range. The carrier life-time for as-grown materials and for materials with two different levels of Be doping annealed at different temperatures are measured and the results are compared. Subpicosecond carrier lifetimes are obtained. © 2011 IEEE.

U2 - 10.1109/irmmw-THz.2011.6105007

DO - 10.1109/irmmw-THz.2011.6105007

M3 - Conference contribution

SN - 9781457705090

BT - IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves|IRMMW-THz - Int. Conf. Infrared, Millimeter, Terahertz Waves

PB - IEEE

T2 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011

Y2 - 1 July 2011

ER -

Carrier dynamic measurement of Be doped multi-quantum-well InGaAs-InAlAs material systems at 1550 nm for THz applications

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