Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy

Patrick Parkinson; Hannah J Joyce; Qiang Gao; Hark Hoe Tan; Xin Zhang; Jin Zou; Chennupati Jagadish; Laura M Herz; Michael B Johnston

doi:10.1021/nl901633

Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy

Patrick Parkinson, Hannah J Joyce, Qiang Gao, Hark Hoe Tan, Xin Zhang, Jin Zou, Chennupati Jagadish, Laura M Herz, Michael B Johnston

Research output: Contribution to journal › Article › peer-review

Abstract

We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.

Original language	English
Pages (from-to)	3349-3353
Number of pages	4
Journal	Nano Letters
Volume	9
Issue number	9
DOIs	https://doi.org/10.1021/nl901633
Publication status	Published - Jul 2009

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http://pubs.acs.org/doi/abs/10.1021/nl9016336

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title = "Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy",

abstract = "We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.",

author = "Patrick Parkinson and Joyce, {Hannah J} and Qiang Gao and Tan, {Hark Hoe} and Xin Zhang and Jin Zou and Chennupati Jagadish and Herz, {Laura M} and Johnston, {Michael B}",

year = "2009",

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doi = "10.1021/nl901633",

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volume = "9",

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journal = "Nano Letters",

issn = "1530-6984",

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T1 - Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy

AU - Parkinson, Patrick

AU - Joyce, Hannah J

AU - Gao, Qiang

AU - Tan, Hark Hoe

AU - Zhang, Xin

AU - Zou, Jin

AU - Jagadish, Chennupati

AU - Herz, Laura M

AU - Johnston, Michael B

PY - 2009/7

Y1 - 2009/7

N2 - We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.

AB - We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.

U2 - 10.1021/nl901633

DO - 10.1021/nl901633

M3 - Article

SN - 1530-6984

VL - 9

SP - 3349

EP - 3353

JO - Nano Letters

JF - Nano Letters

IS - 9

ER -

Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy

Abstract

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