Carrier localization mechanisms in InxGa1-xN/GaN quantum wells

D. Watson-Parris, M. J. Godfrey, P. Dawson, R. A. Oliver, M. J. Galtrey, M. J. Kappers, C. J. Humphreys

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that the resultant fluctuations in alloy concentration can localize the carriers. By using a locally varying indium concentration function we have calculated the contribution to the potential energy of the carriers from band gap fluctuations, the deformation potential, and the spontaneous and piezoelectric fields. We have considered the effect of well width fluctuations and found that these contribute to electron localization, but not to hole localization. We also simulate low temperature photoluminescence spectra and find good agreement with experiment. © 2011 American Physical Society.
    Original languageEnglish
    Article number115321
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume83
    Issue number11
    DOIs
    Publication statusPublished - 16 Mar 2011

    Keywords

    • Photoluminescence
    • InGaN/GaN
    • Localization mechanisms

    Fingerprint

    Dive into the research topics of 'Carrier localization mechanisms in InxGa1-xN/GaN quantum wells'. Together they form a unique fingerprint.

    Cite this