Carrier relaxation with LO phonon decay in semiconductor quantum dots.

S. A. Levetas, M. J. Godfrey, P. Dawson

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Anal. of an exactly sol. model of phonons coupled to a carrier in a quantum dot provides a clear illustration of a phonon bottleneck to relaxation. The introduction of three-phonon interactions leads to a broad window for relaxation by the processes of LO phonon scattering and decay. [on SciFinder (R)]
    Original languageEnglish
    JournalSpringer Proceedings in Physics
    Volume87
    Publication statusPublished - 2001

    Keywords

    • Excited state (Rabi splitting; carrier relaxation with LO phonon decay in semiconductor quantum dots); Electron-phonon interaction (carrier relaxation with LO phonon decay in semiconductor quantum dots); LO phonon (decay of; carrier relaxation with LO phonon decay in semiconductor quantum dots); Acoustic phonon (longitudinal; carrier relaxation with LO phonon decay in semiconductor quantum dots); Electric current carriers (relaxation of; carrier relaxation with LO phonon decay in semiconductor quantum dots); Quantum dot devices (semiconductor; carrier relaxation with LO phonon decay in semiconductor quantum dots)

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