Cascode cell analysis for ultra-broadband GaAs MMIC component design applications

Priya Shinghal, Christopher I. Duff, Robin Sloan, Steve Cochran

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Analysis and comparison of MMIC cascode cells is presented. The cascode employs the WIN Foundry PP10-10 0.1μm gate length, 2 mil AlGaAs/InGaAs pHEMT process in common-source and common-gate configurations. On-wafer s-parameter measurements are performed in the frequency range of 0.045 GHz-110 GHz for cascode and device pull-out data. Comparison of measured data is made with s-parameter simulation data obtained using the WIN Process Design Kit (PDK) in common-source & common-gate device configurations and Electromagnetic (EM) simulated data for the passives surrounding the cascode devices. The comparison of simulated & measured s-parameters investigates a 3 dB difference in gain and differing return losses. This work highlights the need for high frequency empirical device models for cascode cells, in particular a common-gate device model extraction including higher frequency parasitics, for implementation in mm-wave cascode designs. © 2013 IEEE.
    Original languageEnglish
    Title of host publication2013 IEEE MTT-S International Microwave and RF Conference, IMaRC 2013|IEEE MTT-S Int. Microw. RF Conf., IMaRC
    Place of PublicationPiscataway, USA
    PublisherIEEE Computer Society
    Number of pages4
    DOIs
    Publication statusPublished - 2013
    Event2013 IEEE MTT-S International Microwave and RF Conference, IMaRC 2013 - New Delhi
    Duration: 1 Jul 2013 → …

    Conference

    Conference2013 IEEE MTT-S International Microwave and RF Conference, IMaRC 2013
    CityNew Delhi
    Period1/07/13 → …

    Keywords

    • Cascode
    • Common gate
    • Common source
    • MMIC
    • pHEMT
    • Ultra-broadband

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