Cascode cell analysis for ultra-broadband GaAs MMIC component design applications

Priya Shinghal; Christopher I. Duff; Robin Sloan; Steve Cochran

doi:10.1109/IMaRC.2013.6777735

Cascode cell analysis for ultra-broadband GaAs MMIC component design applications

Priya Shinghal, Christopher I. Duff, Robin Sloan, Steve Cochran

Research output: Chapter in Book/Conference proceeding › Conference contribution

Abstract

Analysis and comparison of MMIC cascode cells is presented. The cascode employs the WIN Foundry PP10-10 0.1μm gate length, 2 mil AlGaAs/InGaAs pHEMT process in common-source and common-gate configurations. On-wafer s-parameter measurements are performed in the frequency range of 0.045 GHz-110 GHz for cascode and device pull-out data. Comparison of measured data is made with s-parameter simulation data obtained using the WIN Process Design Kit (PDK) in common-source & common-gate device configurations and Electromagnetic (EM) simulated data for the passives surrounding the cascode devices. The comparison of simulated & measured s-parameters investigates a 3 dB difference in gain and differing return losses. This work highlights the need for high frequency empirical device models for cascode cells, in particular a common-gate device model extraction including higher frequency parasitics, for implementation in mm-wave cascode designs. © 2013 IEEE.

Original language	English
Title of host publication	2013 IEEE MTT-S International Microwave and RF Conference, IMaRC 2013\|IEEE MTT-S Int. Microw. RF Conf., IMaRC
Place of Publication	Piscataway, USA
Publisher	IEEE Computer Society
Number of pages	4
DOIs	https://doi.org/10.1109/IMaRC.2013.6777735
Publication status	Published - 2013
Event	2013 IEEE MTT-S International Microwave and RF Conference, IMaRC 2013 - New Delhi Duration: 1 Jul 2013 → …

Conference

Conference	2013 IEEE MTT-S International Microwave and RF Conference, IMaRC 2013
City	New Delhi
Period	1/07/13 → …

Keywords

Cascode
Common gate
Common source
MMIC
pHEMT
Ultra-broadband

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10.1109/IMaRC.2013.6777735

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@inproceedings{5d41b6ae0c464968bd6837f214d72616,

title = "Cascode cell analysis for ultra-broadband GaAs MMIC component design applications",

abstract = "Analysis and comparison of MMIC cascode cells is presented. The cascode employs the WIN Foundry PP10-10 0.1μm gate length, 2 mil AlGaAs/InGaAs pHEMT process in common-source and common-gate configurations. On-wafer s-parameter measurements are performed in the frequency range of 0.045 GHz-110 GHz for cascode and device pull-out data. Comparison of measured data is made with s-parameter simulation data obtained using the WIN Process Design Kit (PDK) in common-source \& common-gate device configurations and Electromagnetic (EM) simulated data for the passives surrounding the cascode devices. The comparison of simulated \& measured s-parameters investigates a 3 dB difference in gain and differing return losses. This work highlights the need for high frequency empirical device models for cascode cells, in particular a common-gate device model extraction including higher frequency parasitics, for implementation in mm-wave cascode designs. {\textcopyright} 2013 IEEE.",

keywords = "Cascode, Common gate, Common source, MMIC, pHEMT, Ultra-broadband",

author = "Priya Shinghal and Duff, \{Christopher I.\} and Robin Sloan and Steve Cochran",

year = "2013",

doi = "10.1109/IMaRC.2013.6777735",

language = "English",

booktitle = "2013 IEEE MTT-S International Microwave and RF Conference, IMaRC 2013|IEEE MTT-S Int. Microw. RF Conf., IMaRC",

publisher = "IEEE Computer Society ",

address = "United States",

note = "2013 IEEE MTT-S International Microwave and RF Conference, IMaRC 2013 ; Conference date: 01-07-2013",

}

Shinghal, P, Duff, CI, Sloan, R & Cochran, S 2013, Cascode cell analysis for ultra-broadband GaAs MMIC component design applications. in 2013 IEEE MTT-S International Microwave and RF Conference, IMaRC 2013|IEEE MTT-S Int. Microw. RF Conf., IMaRC. IEEE Computer Society , Piscataway, USA, 2013 IEEE MTT-S International Microwave and RF Conference, IMaRC 2013, New Delhi, 1/07/13. https://doi.org/10.1109/IMaRC.2013.6777735

Cascode cell analysis for ultra-broadband GaAs MMIC component design applications. / Shinghal, Priya; Duff, Christopher I.; Sloan, Robin et al.
2013 IEEE MTT-S International Microwave and RF Conference, IMaRC 2013|IEEE MTT-S Int. Microw. RF Conf., IMaRC. Piscataway, USA: IEEE Computer Society , 2013.

Research output: Chapter in Book/Conference proceeding › Conference contribution

TY - GEN

T1 - Cascode cell analysis for ultra-broadband GaAs MMIC component design applications

AU - Shinghal, Priya

AU - Duff, Christopher I.

AU - Sloan, Robin

AU - Cochran, Steve

PY - 2013

Y1 - 2013

N2 - Analysis and comparison of MMIC cascode cells is presented. The cascode employs the WIN Foundry PP10-10 0.1μm gate length, 2 mil AlGaAs/InGaAs pHEMT process in common-source and common-gate configurations. On-wafer s-parameter measurements are performed in the frequency range of 0.045 GHz-110 GHz for cascode and device pull-out data. Comparison of measured data is made with s-parameter simulation data obtained using the WIN Process Design Kit (PDK) in common-source & common-gate device configurations and Electromagnetic (EM) simulated data for the passives surrounding the cascode devices. The comparison of simulated & measured s-parameters investigates a 3 dB difference in gain and differing return losses. This work highlights the need for high frequency empirical device models for cascode cells, in particular a common-gate device model extraction including higher frequency parasitics, for implementation in mm-wave cascode designs. © 2013 IEEE.

AB - Analysis and comparison of MMIC cascode cells is presented. The cascode employs the WIN Foundry PP10-10 0.1μm gate length, 2 mil AlGaAs/InGaAs pHEMT process in common-source and common-gate configurations. On-wafer s-parameter measurements are performed in the frequency range of 0.045 GHz-110 GHz for cascode and device pull-out data. Comparison of measured data is made with s-parameter simulation data obtained using the WIN Process Design Kit (PDK) in common-source & common-gate device configurations and Electromagnetic (EM) simulated data for the passives surrounding the cascode devices. The comparison of simulated & measured s-parameters investigates a 3 dB difference in gain and differing return losses. This work highlights the need for high frequency empirical device models for cascode cells, in particular a common-gate device model extraction including higher frequency parasitics, for implementation in mm-wave cascode designs. © 2013 IEEE.

KW - Cascode

KW - Common gate

KW - Common source

KW - MMIC

KW - pHEMT

KW - Ultra-broadband

UR - https://www.scopus.com/pages/publications/84899126305

U2 - 10.1109/IMaRC.2013.6777735

DO - 10.1109/IMaRC.2013.6777735

M3 - Conference contribution

BT - 2013 IEEE MTT-S International Microwave and RF Conference, IMaRC 2013|IEEE MTT-S Int. Microw. RF Conf., IMaRC

PB - IEEE Computer Society

CY - Piscataway, USA

T2 - 2013 IEEE MTT-S International Microwave and RF Conference, IMaRC 2013

Y2 - 1 July 2013

ER -

Cascode cell analysis for ultra-broadband GaAs MMIC component design applications

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Keywords

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