CdS/CdSe strained layer superlattices grown by MOCVD

M. P. Halsall, J. E. Nicholls, J. J. Davies, B. Cockayne, P. J. Wright, A. G. Cullis

    Research output: Contribution to journalArticlepeer-review


    The authors report the first growth of superlattices in the wurtzite CdS/CdSe system. The superlattices were grown by metal-organic chemical vapour deposition on GaAs (111) substrates. Transmission electron microscopy shows the superlattices to be of good quality with abrupt interfaces. The layers were purely hexagonal with no twinning. Low-temperature photoluminescence of the superlattices was studied for various layer thicknesses. All the structures showed a broad intense near-infrared emission which shifts to higher energy for the thinnest layers. In addition, thicker layers showed a narrower red emission at 690 nm. The photoluminescence spectra provide preliminary evidence that the structure is of type II.
    Original languageEnglish
    Article number008
    Pages (from-to)1126-1128
    Number of pages2
    JournalSemiconductor Science and Technology
    Issue number11
    Publication statusPublished - 1988


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