Channel mobility in AlGaN/GaN HFETs on SiC and sapphire substrates

M. J. Uren; T. Martin; B. T. Hughes; K. P. Hilton; A. Wells; R. S. Balmer; D. C. Herbert; A. M. Keir; D. J. Wallis; A. J. Pidduck; M. Missous

doi:10.1002/1521-396X(200212)194:2<468::AID-PSSA468>3.0.CO;2-W

Channel mobility in AlGaN/GaN HFETs on SiC and sapphire substrates

M. J. Uren^*, T. Martin, B. T. Hughes, K. P. Hilton, A. Wells, R. S. Balmer, D. C. Herbert, A. M. Keir, D. J. Wallis, A. J. Pidduck, M. Missous

^*Corresponding author for this work

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Abstract

Drift mobility as a function of gate voltage has been measured in HFETs fabricated by MOVPE to a common layer structure, but with varying pinch-off voltage attributed to varying deep level defect densities. The mobility reached a peak of 2000 cm²/Vs for the best samples at room temperature. At high number density the layers showed a common mobility against gate voltage curve, which is attributed to the mobility being related to surface electric field rather than number density.

Original language	English
Pages (from-to)	468-471
Number of pages	4
Journal	Physica Status Solidi (A) Applied Research
Volume	194
Issue number	2 SPEC.
DOIs	https://doi.org/10.1002/1521-396X(200212)194:2<468::AID-PSSA468>3.0.CO;2-W
Publication status	Published - 1 Dec 2002

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Uren, M. J., Martin, T., Hughes, B. T., Hilton, K. P., Wells, A., Balmer, R. S., Herbert, D. C., Keir, A. M., Wallis, D. J., Pidduck, A. J., & Missous, M. (2002). Channel mobility in AlGaN/GaN HFETs on SiC and sapphire substrates. Physica Status Solidi (A) Applied Research, 194(2 SPEC.), 468-471. https://doi.org/10.1002/1521-396X(200212)194:2<468::AID-PSSA468>3.0.CO;2-W

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title = "Channel mobility in AlGaN/GaN HFETs on SiC and sapphire substrates",

abstract = "Drift mobility as a function of gate voltage has been measured in HFETs fabricated by MOVPE to a common layer structure, but with varying pinch-off voltage attributed to varying deep level defect densities. The mobility reached a peak of 2000 cm2/Vs for the best samples at room temperature. At high number density the layers showed a common mobility against gate voltage curve, which is attributed to the mobility being related to surface electric field rather than number density.",

author = "Uren, {M. J.} and T. Martin and Hughes, {B. T.} and Hilton, {K. P.} and A. Wells and Balmer, {R. S.} and Herbert, {D. C.} and Keir, {A. M.} and Wallis, {D. J.} and Pidduck, {A. J.} and M. Missous",

year = "2002",

month = dec,

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doi = "10.1002/1521-396X(200212)194:2<468::AID-PSSA468>3.0.CO;2-W",

language = "English",

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journal = "Physica Status Solidi (A) Applied Research",

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TY - JOUR

T1 - Channel mobility in AlGaN/GaN HFETs on SiC and sapphire substrates

AU - Uren, M. J.

AU - Martin, T.

AU - Hughes, B. T.

AU - Hilton, K. P.

AU - Wells, A.

AU - Balmer, R. S.

AU - Herbert, D. C.

AU - Keir, A. M.

AU - Wallis, D. J.

AU - Pidduck, A. J.

AU - Missous, M.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Drift mobility as a function of gate voltage has been measured in HFETs fabricated by MOVPE to a common layer structure, but with varying pinch-off voltage attributed to varying deep level defect densities. The mobility reached a peak of 2000 cm2/Vs for the best samples at room temperature. At high number density the layers showed a common mobility against gate voltage curve, which is attributed to the mobility being related to surface electric field rather than number density.

AB - Drift mobility as a function of gate voltage has been measured in HFETs fabricated by MOVPE to a common layer structure, but with varying pinch-off voltage attributed to varying deep level defect densities. The mobility reached a peak of 2000 cm2/Vs for the best samples at room temperature. At high number density the layers showed a common mobility against gate voltage curve, which is attributed to the mobility being related to surface electric field rather than number density.

UR - http://www.scopus.com/inward/record.url?scp=0036960167&partnerID=8YFLogxK

U2 - 10.1002/1521-396X(200212)194:2<468::AID-PSSA468>3.0.CO;2-W

DO - 10.1002/1521-396X(200212)194:2<468::AID-PSSA468>3.0.CO;2-W

M3 - Article

AN - SCOPUS:0036960167

SN - 0031-8965

VL - 194

SP - 468

EP - 471

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 2 SPEC.

ER -

Channel mobility in AlGaN/GaN HFETs on SiC and sapphire substrates

Abstract

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