Characterisation of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection

I. Kostakis; D. Saeedkia; M. Missous

Characterisation of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection

I. Kostakis
, D. Saeedkia
, M. Missous

The University of Manchester

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Virtual Journal of Ultrafast Science
Volume	11
Issue number	6
Publication status	Published - Jun 2012

Cite this

@article{300bc0d192be4b56afb466c9618dee12,

title = "Characterisation of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection",

author = "I. Kostakis and D. Saeedkia and M. Missous",

year = "2012",

month = jun,

language = "English",

volume = "11",

journal = "Virtual Journal of Ultrafast Science",

publisher = "American Institute of Physics",

number = "6",

}