Abstract
Indium phosphide grown from adducts prepared both in the MOCVD reactor immediately prior to growth, and from adducts prepared separately, has been measured. The epitaxial layers were characterised by Hall effect, capacitance DLTS and photoluminescence measurements. Layers grown from adducts prepared in situ had higher mobilities and lower deep level concentrations. The near band-edge photoluminescence spectra of these samples were dominated by exciton recombination, whereas the spectra of layers grown using a pre-synthesised adduct were dominated by donor-acceptor pair recombination. The main unintentional acceptor was found to be zinc, and the dominant DLTS signal was invariably that due to iron (Ec-0.56 eV).
Original language | English |
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Pages (from-to) | 326-333 |
Number of pages | 8 |
Journal | Journal of Crystal Growth |
Volume | 68 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Sept 1984 |