Characterisation of MOCVD InP grown from different adduct sources

D. J. Nicholas*, D. Allsopp, B. Hamilton, A. R. Peaker, S. J. Bass

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Indium phosphide grown from adducts prepared both in the MOCVD reactor immediately prior to growth, and from adducts prepared separately, has been measured. The epitaxial layers were characterised by Hall effect, capacitance DLTS and photoluminescence measurements. Layers grown from adducts prepared in situ had higher mobilities and lower deep level concentrations. The near band-edge photoluminescence spectra of these samples were dominated by exciton recombination, whereas the spectra of layers grown using a pre-synthesised adduct were dominated by donor-acceptor pair recombination. The main unintentional acceptor was found to be zinc, and the dominant DLTS signal was invariably that due to iron (Ec-0.56 eV).

Original languageEnglish
Pages (from-to)326-333
Number of pages8
JournalJournal of Crystal Growth
Volume68
Issue number1
DOIs
Publication statusPublished - 1 Sept 1984

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