Characterising the degree of polarisation anisotropy in an a-plane GaN film

T. J. Badcock, S. Schulz, M. A. Moram, M. J. Kappers, P. Dawson, E. P. O'Reilly, C. J. Humphreys

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We have performed a thorough characterisation of an a-plane GaN film, using X-ray diffraction reciprocal space mapping, k•p theory and polarised photoluminescence spectroscopy Within the plane of the film and along the growth direction, the strain was found to be compressive and tensile respectively. The relative oscillator strength of the transitions involving the topmost valence bands has been calculated as a function of strain. We find that using the experimentally determined strain values as input parameters to the theoretical model, results in good agreement between the predicted relative oscillator strengths and the degree of optical polarisation anisotropy measured in the low temperature photoluminescence spectroscopy. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
    Original languageEnglish
    Pages (from-to)1897-1899
    Number of pages2
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume7
    Issue number7-8
    DOIs
    Publication statusPublished - 2010

    Keywords

    • Electronic structure
    • GaN
    • MOVPE
    • Photoluminescence
    • Polarisation
    • Strain

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