Characterization of Edgeless CdTe Detectors for use in Hard X-Ray Imaging Applications

M C Veale; S J Bell; L L Jones; P Seller; M D Wilson; R C Cernik; J Kalliopuska; H Pohjonen; H Andersson; S Nenonen; V Kachkanov

doi:10.1109/Tns.2012.2197025

Characterization of Edgeless CdTe Detectors for use in Hard X-Ray Imaging Applications

M C Veale, S J Bell, L L Jones, P Seller, M D Wilson, R C Cernik, J Kalliopuska, H Pohjonen, H Andersson, S Nenonen, V Kachkanov

Research output: Contribution to journal › Article › peer-review

Abstract

Segmentation of the anode-side of a M-pi-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 m pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-pi-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.

Original language	English
Pages (from-to)	1536-1543
Number of pages	8
Journal	Ieee Transactions on Nuclear Science
Volume	59
Issue number	4
DOIs	https://doi.org/10.1109/Tns.2012.2197025
Publication status	Published - 2012

Keywords

cdte
edgeless detectors
small pixel
tcad simulation
x-ray detector
radiation detector
cdznte detectors
improvement
electrode

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10.1109/Tns.2012.2197025

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title = "Characterization of Edgeless CdTe Detectors for use in Hard X-Ray Imaging Applications",

abstract = "Segmentation of the anode-side of a M-pi-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 m pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-pi-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.",

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AU - Veale, M C

AU - Bell, S J

AU - Jones, L L

AU - Seller, P

AU - Wilson, M D

AU - Cernik, R C

AU - Kalliopuska, J

AU - Pohjonen, H

AU - Andersson, H

AU - Nenonen, S

AU - Kachkanov, V

N1 - 3 993XS Times Cited:6 Cited References Count:32

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N2 - Segmentation of the anode-side of a M-pi-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 m pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-pi-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.

AB - Segmentation of the anode-side of a M-pi-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 m pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-pi-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.

KW - cdte

KW - edgeless detectors

KW - small pixel

KW - tcad simulation

KW - x-ray detector

KW - radiation detector

KW - cdznte detectors

KW - improvement

KW - electrode

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DO - 10.1109/Tns.2012.2197025

M3 - Article

SN - 0018-9499

VL - 59

SP - 1536

EP - 1543

JO - Ieee Transactions on Nuclear Science

JF - Ieee Transactions on Nuclear Science

IS - 4

ER -

Characterization of Edgeless CdTe Detectors for use in Hard X-Ray Imaging Applications

Abstract

Keywords

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