Characterization of quantum well structures using microscope-spectrophotometry

Rachel M. Geatches; Karen J. Reeson; Alan J. Criddle; Roger P. Webb

Characterization of quantum well structures using microscope-spectrophotometry

Rachel M. Geatches^*, Karen J. Reeson, Alan J. Criddle, Roger P. Webb

^*Corresponding author for this work

Natural History Museum

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper the application of microscope-spectrophotometry to the nondestructive characterization of a variety of multi-layer GaAs/AlGaAs structures, is described. Spectral reflectance results are used to indirectly determine variations in aluminum content, and the interdependency of aluminum content with layer thicknesses. The penetration depth of light from the visible spectrum is assessed from the correlation between spectral reflectance measurements and fitted optical models. Finally, a series of single quantum wells are investigated, and it is concluded that a significant improvement in the characterization of these materials will be achieved with an extension of the spectral measurement range into the ultra violet.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Publisher	Materials Research Society
Pages	111-117
Number of pages	7
Volume	324
ISBN (Print)	1558992235
Publication status	Published - 1994
Event	Proceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA Duration: 29 Nov 1993 → 2 Dec 1993

Conference

Conference	Proceedings of the 1993 Fall Meeting of the Materials Research Society
City	Boston, MA, USA
Period	29/11/93 → 2/12/93

Cite this

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title = "Characterization of quantum well structures using microscope-spectrophotometry",

abstract = "In this paper the application of microscope-spectrophotometry to the nondestructive characterization of a variety of multi-layer GaAs/AlGaAs structures, is described. Spectral reflectance results are used to indirectly determine variations in aluminum content, and the interdependency of aluminum content with layer thicknesses. The penetration depth of light from the visible spectrum is assessed from the correlation between spectral reflectance measurements and fitted optical models. Finally, a series of single quantum wells are investigated, and it is concluded that a significant improvement in the characterization of these materials will be achieved with an extension of the spectral measurement range into the ultra violet.",

author = "Geatches, {Rachel M.} and Reeson, {Karen J.} and Criddle, {Alan J.} and Webb, {Roger P.}",

year = "1994",

language = "English",

isbn = "1558992235",

volume = "324",

pages = "111--117",

booktitle = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

address = "United States",

note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 02-12-1993",

}

TY - GEN

T1 - Characterization of quantum well structures using microscope-spectrophotometry

AU - Geatches, Rachel M.

AU - Reeson, Karen J.

AU - Criddle, Alan J.

AU - Webb, Roger P.

PY - 1994

Y1 - 1994

N2 - In this paper the application of microscope-spectrophotometry to the nondestructive characterization of a variety of multi-layer GaAs/AlGaAs structures, is described. Spectral reflectance results are used to indirectly determine variations in aluminum content, and the interdependency of aluminum content with layer thicknesses. The penetration depth of light from the visible spectrum is assessed from the correlation between spectral reflectance measurements and fitted optical models. Finally, a series of single quantum wells are investigated, and it is concluded that a significant improvement in the characterization of these materials will be achieved with an extension of the spectral measurement range into the ultra violet.

AB - In this paper the application of microscope-spectrophotometry to the nondestructive characterization of a variety of multi-layer GaAs/AlGaAs structures, is described. Spectral reflectance results are used to indirectly determine variations in aluminum content, and the interdependency of aluminum content with layer thicknesses. The penetration depth of light from the visible spectrum is assessed from the correlation between spectral reflectance measurements and fitted optical models. Finally, a series of single quantum wells are investigated, and it is concluded that a significant improvement in the characterization of these materials will be achieved with an extension of the spectral measurement range into the ultra violet.

UR - http://www.scopus.com/inward/record.url?scp=0028135852&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028135852

SN - 1558992235

VL - 324

SP - 111

EP - 117

BT - Materials Research Society Symposium Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1993 Fall Meeting of the Materials Research Society

Y2 - 29 November 1993 through 2 December 1993

ER -

Characterization of quantum well structures using microscope-spectrophotometry

Abstract

Conference

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