Characterization of Si1-x-yGexCy versus Si1-xGex synthesized by ion implantation

Jianqing Wen, Jan Evans-Freeman, A. R. Peaker, J. P. Zhang, F. Cristiano, P. L.F. Hemment

Research output: Contribution to conferencePaperpeer-review

Abstract

Si1-x-yGexCy and Si1-xGex have been formed by implanting Ge and/or C ions into silicon. The resulting amorphous layers were then recrystallised by solid phase epitaxy. Modeling of the strain profiles in the layer is compared with experimental results from double crystal X-ray diffraction measurements. For a Ge implant with a dose of 3×1016cm-2 the distribution of the strain in the layer follows the Ge profile so indicating an elastically strained layer. For samples implanted with a Ge dose of 9×1016cm-2 TEM results indicate a dislocate region between the surface and the EOR region. A Carbon implant prior to the Ge implant reduces the dislocation density considerably and greatly improves the quality of the layer resulting in the formation of a ternary Si1-x-yGexCy alloy as evidenced by TEM and DCD data. Carbon was found to have partially compensated the compressive strain, making the alloy below the critical layer thickness. The small carbon atoms also act as sinks for point defects. This impedes the relaxation process through the reduced nucleation mechanism. Study of the deep Si post-amorphisation sample supports a model involving homogeneous and inhomogeneous alloy growth that affects the introduction of strain relief defects. Photoluminescence study, used in conjunction with other techniques, is shown to be a sensitive tool for assessing the quality of the alloy layers.

Original languageEnglish
Pages439-442
Number of pages4
Publication statusPublished - 1999
Event8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 - Singapore, Singapore
Duration: 8 Sept 199910 Sept 1999

Conference

Conference8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99
Country/TerritorySingapore
CitySingapore
Period8/09/9910/09/99

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